公开(公告)号：US20230154509A1

公开(公告)日：2023-05-18

申请号：US17814640

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Hwan CHOO ,  Jun Ha HWANG ,  Doo Hee HWANG

IPC: G11C7/22 ,  G11C7/10 ,  G11C5/14

CPC classification number: G11C7/222 ,  G11C7/109 ,  G11C7/1048 ,  G11C5/14

Abstract: A memory device includes a memory cell for storing data, and a memory controller configured to check whether a dynamic voltage frequency scaling core (DVFSC) operation is used, check information stored in the memory device indicating a setting of the host device in response to the DVFSC operation being used, determine a level of a low voltage used for the DVFSC operation based on the information, and transmit the determined level of the low voltage used for the DVFSC operation to the host device.

公开(公告)号：US20230049195A1

公开(公告)日：2023-02-16

申请号：US17713599

申请日：2022-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Ha HWANG ,  Chul-Hwan CHOO ,  Gye Sik OH ,  Young Bin LEE ,  Sung Won JO

IPC: G06F3/06

Abstract: A method of operating a host device to control a storage device which includes a register is provided. The method includes: providing the storage device with a partial array refresh setting indicating a non-masking segment among a masking segment and the non-masking segment; providing a refresh command to the storage device; and providing a write command for the masking segment to the storage device to control the storage device to store data while a partial array refresh is performed in the storage device based on the refresh command.

公开(公告)号：US20180362806A1

公开(公告)日：2018-12-20

申请号：US15822117

申请日：2017-11-25

Applicant: Samsung Electronics Co., Ltd. ,  K.C.TECH CO., LTD

Inventor： Seung Ho PARK ,  Chang Gil Kwon ,  Sung Pyo LEE ,  Jun Ha HWANG ,  Sang Kyun KIM ,  Hye Sung PARK ,  Su Young SHIN ,  Woo In LEE ,  Yang Hee LEE ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/3105

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.