公开(公告)号：US20200281441A1

公开(公告)日：2020-09-10

申请号：US16803133

申请日：2020-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaejun KIM ,  Daejoung KIM ,  Gisung HAN

IPC: A47L15/50

Abstract: A dish washer includes: a basket; a first supporting member coupled to the basket in such a way to be rotatable between a first position of being folded to the basket and a second position of being unfolded from the basket; a second supporting member positioned below the first supporting member and coupled to the basket in such a way to be rotatable between a third position of being folded to the basket and a fourth position of being unfolded from the basket; and a connecting member rotating the second supporting member from the third position to the fourth position when the first supporting member rotates from the first position to the second position, wherein one end of the connecting member is connected to the first supporting member and the other end of the connecting member is connected to the second supporting member.

公开(公告)号：US20250133793A1

公开(公告)日：2025-04-24

申请号：US18663416

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongryeol YOO ,  Jaejun KIM ,  Ingyu JANG ,  Gwangjun KIM ,  Sunghwan KIM ,  Jiwon JEONG ,  Jeongsang PYO

IPC: H01L29/36 ,  H01L29/167

Abstract: A semiconductor device includes a substrate; an active pattern extending on the substrate in a first direction; a plurality of channel layers on the active pattern and spaced apart from each other in a vertical direction; a gate structure crossing the active pattern, the gate structure surrounding the plurality of channel layers and extending in a second direction orthogonal to the first direction; and source/drain patterns on a region of the active pattern on both sides of the gate structure, and having a semiconductor liner layer connected to each of side surfaces of the plurality of channel layers, and a semiconductor filling layer on the semiconductor liner layer. The semiconductor liner layer includes silicon-germanium (SiGe) doped with a first conductivity-type impurity. The semiconductor filling layer includes an epitaxial layer having a germanium (Ge) concentration higher than that of the semiconductor liner layer, and the epitaxial layer is doped with Ga.

公开(公告)号：US20210215350A1

公开(公告)日：2021-07-15

申请号：US17143600

申请日：2021-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaejun KIM ,  Gerhardt KELLERMANN ,  Ana RELVÃO ,  Gisung HAN

IPC: F24C15/20

Abstract: Disclosed is a ventilation apparatus including an exhaust pipe of an induction hood in which a position change of piping in a discharge direction is freely performed. The ventilation apparatus, which includes a first pipe connected to a suction port through which contaminated air is sucked, a second pipe configured to guide the contaminated air and include a first connection portion connected to the first pipe and a second connection portion extending from the first connection portion, the second pipe being detachably coupled to the first pipe so that the position of the second connection portion is able to be changed, and a third pipe connected to the second pipe and include a discharge port through which the contaminated air is discharged, the third pipe being configured to be rotatable with respect to the second pipe so that the position of the discharge port is able to be changed.