公开(公告)号：US20150262625A1

公开(公告)日：2015-09-17

申请号：US14554113

申请日：2014-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG-HOON HAN ,  DONG-WAN KIM ,  JU-IK LE

IPC: G11C5/06 ,  H01L23/532 ,  H01L27/105 ,  H01L23/528

CPC classification number: G11C5/063 ,  G11C7/18 ,  H01L21/764 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.

Abstract translation: 半导体器件包括位于半导体衬底上的位线结构，位线在位线结构的第一侧表面上的外部位线间隔件，内部位线间隔件包括位于位线结构和外部位之间的第一部分 并且位于半导体衬底和外部位线间隔物之间​​的第二部分和位于外部位线间隔物和内部位线间隔物的第二部分之间的块位线间隔件。 第一气隙由外部位线间隔件，内部位线间隔件和块位线间隔件限定。