公开(公告)号：US09240408B2

公开(公告)日：2016-01-19

申请号：US13838172

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Hyun Song ,  Seung-Chul Lee ,  In-Kook Jang

IPC: H01L21/82 ,  H01L27/11 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/823412

Abstract: Integrated circuit device with transistors having different threshold voltages and methods of forming the device are provided. The device may include the first, second and third transistors having threshold voltages different from each other. The first transistor may be free of a stacking fault and the second transistor may include a stacking fault. The concentration of the channel implant region of the third transistor may be different from the concentration of the channel implant region of the first transistor.

Abstract translation: 提供具有不同阈值电压的晶体管的集成电路器件和形成器件的方法。 该器件可以包括具有彼此不同的阈值电压的第一，第二和第三晶体管。 第一晶体管可以没有堆垛层错，并且第二晶体管可能包括堆垛层错。 第三晶体管的沟道注入区域的浓度可以不同于第一晶体管的沟道注入区域的浓度。

公开(公告)号：US20130328133A1

公开(公告)日：2013-12-12

申请号：US13838172

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Hyun Song ,  Seung-Chul Lee ,  In-Kook Jang

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/823412

Abstract: Integrated circuit device with transistors having different threshold voltages and methods of forming the device are provided. The device may include the first, second and third transistors having threshold voltages different from each other. The first transistor may be free of a stacking fault and the second transistor may include a stacking fault. The concentration of the channel implant region of the third transistor may be different from the concentration of the channel implant region of the first transistor.

Abstract translation: 提供具有不同阈值电压的晶体管的集成电路器件和形成器件的方法。 该器件可以包括具有彼此不同的阈值电压的第一，第二和第三晶体管。 第一晶体管可以没有堆垛层错，并且第二晶体管可能包括堆垛层错。 第三晶体管的沟道注入区域的浓度可以不同于第一晶体管的沟道注入区域的浓度。