公开(公告)号：US09852804B2

公开(公告)日：2017-12-26

申请号：US15281837

申请日：2016-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Chul Park ,  Hyun-Young Yoo ,  Sang-Soo Park

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C29/02

CPC classification number: G11C16/3431 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: A method of operating a nonvolatile memory device that includes a three-dimensional (3D) memory cell array is provided as follows. A first read operation is performed on first memory cells connected to a first word line by using a first read voltage level. A read retry operation is, if the first read operation fails, performed on the first memory cells so that a read retry voltage level is set to a second read voltage level. A read offset table is determined based on a difference between the first read voltage level and the second read voltage level. The read offset table stores a plurality of read voltage offsets. A second read operation is performed on second memory cells connected to a second word line by using a third read voltage level determined using the read offset table.