公开(公告)号：US09966132B2

公开(公告)日：2018-05-08

申请号：US15478679

申请日：2017-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye Jin Yim ,  Il Han Park ,  Hyun Kook Park ,  Sung Won Yun

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/08 ,  G11C16/34

CPC classification number: G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3459 ,  G11C2211/5648

Abstract: A method for programming a non-volatile memory device includes programming a lower bit in a memory cell included in the non-volatile memory device, reading the lower bit programmed in the memory cell before programming an upper bit in the memory cell, determining a threshold voltage of the memory cell according to a result of reading the lower bit, determining a type of the memory cell using the threshold voltage, and supplying one of a plurality of pulses to a bit line connected to the memory cell according to the determined type of the memory cell.