公开(公告)号：US10756062B2

公开(公告)日：2020-08-25

申请号：US16359097

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Soo Kim ,  Seung-Duk Baek ,  Sun-Won Kang ,  Ho-Geon Song ,  Gun-Ho Chang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.

公开(公告)号：US11081425B2

公开(公告)日：2021-08-03

申请号：US16505040

申请日：2019-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gun-Ho Chang ,  Seung-Duk Baek

IPC: H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L27/108

Abstract: A semiconductor package includes a base wafer including a first substrate and at least one first through via electrode extending through the first substrate, and a first semiconductor chip provided on the base wafer. The first semiconductor chip includes a second substrate; and at least one second through via electrode extending through the second substrate. The at least one second through via electrode is provided on the at least one first through via electrode to be electrically connected to the at least one first through via electrode. A first diameter of the at least one first through via electrode in a first direction is greater than a second diameter of the at least one second through via electrode in the first direction.

公开(公告)号：US20200013753A1

公开(公告)日：2020-01-09

申请号：US16359097

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Soo Kim ,  Seung-Duk Baek ,  Sun-Won Kang ,  Ho-Geon Song ,  Gun-Ho Chang

IPC: H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.