公开(公告)号：US20150137251A1

公开(公告)日：2015-05-21

申请号：US14454476

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHEE LEE ,  EUI-CHUL JEONG ,  NARA KIM ,  SEUNG HWAN KIM ,  DONGWOO WOO ,  SANGHOON LEE ,  SUNGJOO LEE

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/02 ,  H01L29/423 ,  H01L27/108 ,  H01L21/762

CPC classification number: H01L29/7846 ,  H01L21/76224 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/4236 ,  H01L29/66621

Abstract: A semiconductor device includes a substrate and a device isolation pattern extending from a surface of the substrate into the substrate. The device isolation pattern has an electrically negative property and a physically tensile property. The device isolation pattern delimits an active region of the substrate. A transistor is provided at the active region and has a channel region formed by part of the active region.

Abstract translation: 半导体器件包括从衬底的表面延伸到衬底中的衬底和器件隔离图案。 器件隔离图案具有电负性质和物理拉伸特性。 器件隔离图案限定衬底的有源区。 晶体管设置在有源区，并具有由有源区的一部分形成的沟道区。