公开(公告)号：US20240047306A1

公开(公告)日：2024-02-08

申请号：US18220971

申请日：2023-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongick Anthony LEE ,  Minchan Gwak ,  Gukhee Kim ,  Youngwoo Kim ,  Sangcheol Last Name not provide

IPC: H01L23/48 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L23/481 ,  H01L29/7851 ,  H01L29/66795 ,  H01L29/66545

Abstract: A semiconductor device includes a base layer including a silicon material. A field effect transistor is disposed on a first surface of the base layer. A first insulating interlayer covers the field effect transistor, A buried vertical rail passes through the first insulating interlayer and the base layer. The buried vertical rail includes a first metal pattern and a first barrier pattern surrounding a sidewall of the first metal pattern. A first lower insulating interlayer is on the second surface of the base layer. A lower contact plug passes through the first lower insulating interlayer and directly contacts a lower surface of the buried vertical rail. The lower contact plug includes a second metal pattern and a second barrier pattern surrounding a sidewall of the second metal pattern. A bottom surface of the first metal pattern and a top surface of the second metal pattern directly contact each other.