公开(公告)号：US20240375890A1

公开(公告)日：2024-11-14

申请号：US18659935

申请日：2024-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyoung LEE ,  Jongseong KO ,  Daeyong KIM ,  Donghyun KIM ,  Jisu KIM ,  Pyungkang KIM ,  Kihong PARK ,  Jungjun PARK ,  Jungjoon PARK ,  Jooyoung PARK ,  Junhyeok PARK ,  Hoseok SONG ,  Chiho AHN ,  Kongwoo LEE ,  Chuyoung CHOUNG ,  Jeongmin HWANG

IPC: B65G49/00 ,  B25J11/00 ,  H01L21/67

Abstract: A maintenance automation equipment includes: a first module comprising: a first support supporting a modular device, a fastening device configured to separate or fasten the modular device, a first inspector comprising a camera, and a first transporter, wherein the fastening device and the first inspector are at one end of the first transporter; a second module comprising: a second support, a cleaning device configured to spray a chemical toward the second support, a second inspector comprising an optical camera, and a second transporter, wherein the cleaning device and the second inspector are at one end of the second transporter; a transport module comprising an inter-module transporter; a first storage module; and a second storage module.

公开(公告)号：US20210167004A1

公开(公告)日：2021-06-03

申请号：US16893540

申请日：2020-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee SEO ,  Heonbok LEE ,  Tae-Yeol KIM ,  Daeyong KIM ,  Dohyun LEE

IPC: H01L23/498 ,  H01L29/78

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20230187335A1

公开(公告)日：2023-06-15

申请号：US18105955

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee SEO ,  Heonbok LEE ,  Tae-Yeol KIM ,  Daeyong KIM ,  Dohyun LEE

IPC: H01L23/498 ,  H01L29/78

CPC classification number: H01L23/49844 ,  H01L29/78 ,  H01L23/49811

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.