公开(公告)号：USD748073S1

公开(公告)日：2016-01-26

申请号：US29489150

申请日：2014-04-28

Applicant: Samsung Electronics Co., Ltd.

Designer： Sang Sung Woo ,  Dae Joung Kim ,  Dae Kyung Ahn ,  Seung Chan Lee ,  Sang Min Hyun

公开(公告)号：US11751750B2

公开(公告)日：2023-09-12

申请号：US17293552

申请日：2019-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Joung Kim ,  Jae Jun Kim ,  Gi Sung Han

IPC: A47L15/50

CPC classification number: A47L15/507

Abstract: Disclosed are a rack assembly capable of enhancing usability by improving a rack assembly structure, and a dishwasher having the rack assembly. The dishwasher includes: a washing tub; and a rack assembly provided inside the washing tub, wherein the rack assembly includes: a frame; a tray on which dishes are accommodated and which is movably supported on the frame; and a link unit connecting the frame to the tray and moving the tray to one of a first location and a second location that is lower than the first location, the link unit being rotatably coupled with the frame and the tray.

公开(公告)号：USD737802S1

公开(公告)日：2015-09-01

申请号：US29485727

申请日：2014-03-21

Applicant: Samsung Electronics Co., Ltd.

Designer： Sang Sung Woo ,  Dae Joung Kim ,  Dae Kyung Ahn ,  Seung Chan Lee

公开(公告)号：US11069820B2

公开(公告)日：2021-07-20

申请号：US16848228

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：USD746257S1

公开(公告)日：2015-12-29

申请号：US29488771

申请日：2014-04-23

Applicant: Samsung Electronics Co., Ltd.

Designer： Dae Kyung Ahn ,  Dae Joung Kim ,  Sang Min Hyun

公开(公告)号：USD744982S1

公开(公告)日：2015-12-08

申请号：US29485725

申请日：2014-03-21

Applicant: Samsung Electronics Co., Ltd.

Designer： Dae Joung Kim ,  Dae Kyung Ahn ,  Sang Sung Woo ,  Seung Chan Lee ,  Sangmin Hyun

公开(公告)号：USD737244S1

公开(公告)日：2015-08-25

申请号：US29485720

申请日：2014-03-21

Applicant: Samsung Electronics Co., Ltd.

Designer： Dae Joung Kim ,  Dae Kyung Ahn ,  Sang Sung Woo ,  Seung Chan Lee ,  Sangmin Hyun

公开(公告)号：US10658249B2

公开(公告)日：2020-05-19

申请号：US16170842

申请日：2018-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：USD738860S1

公开(公告)日：2015-09-15

申请号：US29485729

申请日：2014-03-21

Applicant: Samsung Electronics Co., Ltd.

Designer： Dae Joung Kim ,  Dae Kyung Ahn ,  Sang Sung Woo ,  Seung Chan Lee ,  Sangmin Hyun

公开(公告)号：USD734737S1

公开(公告)日：2015-07-21

申请号：US29489152

申请日：2014-04-28

Applicant: Samsung Electronics Co., Ltd.

Designer： Dae Kyung Ahn ,  Dae Joung Kim ,  Sang Sung Woo ,  Seung Chan Lee ,  Sang Min Hyun