公开(公告)号：US20170047113A1

公开(公告)日：2017-02-16

申请号：US15209126

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DO-KYUN KIM ,  DONG-YANG LEE ,  KWANG-HYUN KIM

IPC: G11C11/56 ,  G11C11/4094 ,  G11C11/4091 ,  G11C11/4096

CPC classification number: G11C11/565 ,  G11C7/1006 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096

Abstract: A method of operating a memory device includes writing cell data having one of at least three states to a memory cell; amplifying a voltage level of a bit line connected to the memory cell; determining that the cell data is in a first state when the voltage level of the bit line sensed at a sensing point is equal to or greater than a first reference voltage; determining that the cell data is in a second state when the voltage level of the bit line sensed at the sensing point is equal to or less than a second reference voltage which has a lower voltage level than the first reference voltage; and determining that the cell data is in a third state when the cell data is not in the first or second states.

Abstract translation: 一种操作存储器件的方法包括将具有至少三种状态之一的单元数据写入存储器单元; 放大连接到存储单元的位线的电压电平; 当在感测点处感测到的位线的电压电平等于或大于第一参考电压时，确定单元数据处于第一状态; 当在感测点处感测到的位线的电压电平等于或小于具有比第一参考电压更低的电压电平的第二参考电压时，确定单元数据处于第二状态; 以及当所述单元数据不处于所述第一状态或第二状态时，确定所述单元数据处于第三状态。