公开(公告)号：US11575009B2

公开(公告)日：2023-02-07

申请号：US16822389

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkweon Baek ,  Taeyoung Kim ,  Hakseon Kim ,  Kangoh Yun ,  Changhoon Jeon ,  Junhee Lim

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a gate structure disposed on a substrate. The gate structure has a first sidewall and a second sidewall facing the first sidewall. A first impurity region is disposed within an upper portion of the substrate. The first impurity region is spaced apart from the first sidewall. A third impurity region is within the upper portion of the substrate. The third impurity region is spaced apart from the second sidewall. A first trench is disposed within the substrate between the first sidewall and the first impurity region. The first trench is spaced apart from the first sidewall. A first barrier insulation pattern is disposed within the first trench.