公开(公告)号：US20200220012A1

公开(公告)日：2020-07-09

申请号：US16816908

申请日：2020-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG-GUN YOU ,  Chang-Hee KIM ,  Sung-II PARK ,  Dong-Hun LEE

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/308 ,  H01L23/532 ,  H01L29/10 ,  H01L29/06

Abstract: A vFET includes a first impurity region doped with first impurities at an upper portion of the substrate. A first diffusion control pattern is formed on the first impurity region. The first diffusion control pattern is configured to control the diffusion of the first impurities. A channel extends in a vertical direction substantially orthogonal to an upper surface of the substrate. A second impurity region is doped with second impurities on the channel. A second diffusion control pattern is between the channel and the second impurity region. The second diffusion control pattern is configured to control the diffusion of the second impurities. A gate structure is adjacent to the channel.