公开(公告)号：US20240355883A1

公开(公告)日：2024-10-24

申请号：US18385537

申请日：2023-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyumin YOO ,  Myung Gil KANG ,  Dongwon KIM ,  Jongsu KIM ,  Beomjin PARK ,  Byeonghee SON

IPC: H01L29/08 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0847 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/0653

Abstract: A semiconductor device includes a substrate including an active pattern; a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are stacked to be spaced apart from each other; a source/drain pattern connected to the plurality of semiconductor patterns; a gate electrode on the plurality of semiconductor patterns; and a blocking layer between the source/drain pattern and the active pattern, wherein the source/drain pattern includes a protruding side surface protruding toward the semiconductor patterns, the blocking layer includes silicon-germanium (SiGe), and a germanium concentration of the blocking layer is higher than a germanium concentration of the source/drain pattern.