公开(公告)号：US20220384507A1

公开(公告)日：2022-12-01

申请号：US17698273

申请日：2022-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hoon PARK ,  Yun Ki LEE ,  Bum Suk KIM ,  Bo Mi KIM ,  Tae Sung LEE ,  Yoon Gi JOUNG

IPC: H01L27/146

Abstract: An image sensor, including a substrate having a first surface, and a second surface opposite to the first surface; a first focus pixel; a first merged pixel; a second merged pixel; a first color filter; a second color filter; a third color filter; a grid pattern separating the first to third color filters, but not overlapped by the first to third color filters; a first micro-lens disposed on the first color filter; and a second micro-lens disposed on the second and third color filters, wherein a first-third unit pixel, the first focus pixel, and a second-third unit pixel are continuously arranged along the first direction, and wherein a width of the grid pattern between the first color filter and the second color filter is greater than a width of the grid pattern between the second color filter and the third color filter.

公开(公告)号：US20210055988A1

公开(公告)日：2021-02-25

申请号：US16857358

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bo Mi KIM ,  Dong Gun KIM ,  Soo Hyun KIM ,  Ki Hyun CHOI ,  Pil Chang SON

IPC: G06F11/10

Abstract: An operating method of a memory controller to update metadata using journaling data in a short time during a booting operation, and to maintain reliability of the updated metadata. The operating method of a memory controller includes loading metadata into sub-regions of a buffer memory, updating the metadata using journaling data in a state that error correction code (ECC) functions of memory controller for the sub-regions are disabled, generating a first parity data of data stored in the first sub-region, and enabling the ECC function of the first sub-region, after the first parity data is generated.

公开(公告)号：US20250063788A1

公开(公告)日：2025-02-20

申请号：US18431190

申请日：2024-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min CHO ,  Hee Sub KIM ,  Bo Mi KIM ,  Chul Sung KIM ,  Geun Hee JEONG

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: The semiconductor device includes a substrate, first and second active patterns extending in a first direction, the second active pattern spaced apart from the first active pattern in a second direction different from the first direction, a gate electrode extending in the second direction, a first and second source/drain region each on one side of the gate electrode, a first and second source/drain contact each extending in the second direction on and connected to the first and second source/drain region respectively, and a contact separation layer separating the first and second source/drain contacts, the contact separation layer including a first portion and a second portion on first portion both between the first and second source/drain regions, wherein a width of the first portion of the contact separation layer in the first direction is greater than a width of the second portion of the contact separation layer in the first direction.