公开(公告)号：US20210242201A1

公开(公告)日：2021-08-05

申请号：US17150712

申请日：2021-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil KANG ,  Beom-jin PARK ,  Geum-jong BAE ,  Dong-won KIM ,  Jung-gil YANG

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.