公开(公告)号：US20230039823A1

公开(公告)日：2023-02-09

申请号：US17872143

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONGJIN JEONG ,  SEOKHAN PARK ,  YEJEE SUNWOO ,  BOWON YOO ,  YOUNGWOONG SON

IPC: H01L27/108

Abstract: A semiconductor device includes; cell transistors on a substrate, lower electrodes respectively connected to the cell transistors, arranged according to a first pitch in a first horizontal direction, and extending in a vertical direction, and an etching stop layer surrounding lower sidewalls of the lower electrodes and arranged at a level higher than a level of the cell transistors, wherein the etching stop layer includes a first portion vertically overlapping the lower electrodes and a second portion laterally surrounding the first portion, and the second portion includes recesses arranged according to a second pitch in the first horizontal direction.

公开(公告)号：US20250063724A1

公开(公告)日：2025-02-20

申请号：US18614839

申请日：2024-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GYUHWAN OH ,  JINWOO HAN ,  SEOKHAN PARK ,  SUNG-MIN PARK ,  BOWON YOO

IPC: H10B12/00 ,  H01L23/522

Abstract: A semiconductor device includes a substrate. Bit lines are disposed on the substrate and extend in a first direction. A shield pattern is disposed on the bit lines. A first word line is disposed on the bit lines. The first word line extends in a second direction crossing the first direction. A second word line extends on the bit lines in the second direction and is spaced apart from the first word line in the first direction. A first active pattern and a second active pattern are disposed on the bit lines and are positioned between the first word line and the second word line. The shield pattern includes an opening pattern disposed between adjacent bit lines of the bit lines.

公开(公告)号：US20230389289A1

公开(公告)日：2023-11-30

申请号：US18171171

申请日：2023-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOKHAN PARK ,  KISEOK LEE ,  SEOKHO SHIN ,  HYUNGEUN CHOI ,  BOWON YOO

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/488 ,  H10B12/05

Abstract: A semiconductor device includes bit line structures on a substrate. Each bit line structure extends in a second direction, and the bit line structures are spaced apart from each other in a first direction. The semiconductor device further includes semiconductor patterns spaced apart from each other in the second direction on each of the bit line structures, insulating interlayer patterns between neighboring ones of the semiconductor patterns in the first direction, and word lines spaced apart from each other in the second direction on the bit line structures. Each word line extends in the first direction adjacent to the semiconductor patterns. The semiconductor device further includes capacitors disposed on and electrically connected to the semiconductor patterns, respectively. A seam extending in the second direction is formed in each of the insulating interlayer patterns.