公开(公告)号：US20200083444A1

公开(公告)日：2020-03-12

申请号：US16424608

申请日：2019-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YONGJIN PARK ,  JUNHWAN PARK ,  DONGJUN SEONG ,  GYUHWAN OH ,  HYUNGJONG JEONG

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The memory cell includes a variable resistance pattern, and a heater electrode disposed on the variable resistance pattern. The heater electrode includes a through-hole penetrating the heater electrode. The through-hole exposes one surface of the variable resistance pattern.

公开(公告)号：US20250063724A1

公开(公告)日：2025-02-20

申请号：US18614839

申请日：2024-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GYUHWAN OH ,  JINWOO HAN ,  SEOKHAN PARK ,  SUNG-MIN PARK ,  BOWON YOO

IPC: H10B12/00 ,  H01L23/522

Abstract: A semiconductor device includes a substrate. Bit lines are disposed on the substrate and extend in a first direction. A shield pattern is disposed on the bit lines. A first word line is disposed on the bit lines. The first word line extends in a second direction crossing the first direction. A second word line extends on the bit lines in the second direction and is spaced apart from the first word line in the first direction. A first active pattern and a second active pattern are disposed on the bit lines and are positioned between the first word line and the second word line. The shield pattern includes an opening pattern disposed between adjacent bit lines of the bit lines.