公开(公告)号：US20210335743A1

公开(公告)日：2021-10-28

申请号：US17371405

申请日：2021-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-IK LEE ,  DONG-WAN KIM ,  SEOKHO SHIN ,  JUNG-HOON HAN ,  SANG-OH PARK

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/48 ,  H01L23/522 ,  H01L25/18 ,  H01L23/31

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

公开(公告)号：US20230389289A1

公开(公告)日：2023-11-30

申请号：US18171171

申请日：2023-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEOKHAN PARK ,  KISEOK LEE ,  SEOKHO SHIN ,  HYUNGEUN CHOI ,  BOWON YOO

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/488 ,  H10B12/05

Abstract: A semiconductor device includes bit line structures on a substrate. Each bit line structure extends in a second direction, and the bit line structures are spaced apart from each other in a first direction. The semiconductor device further includes semiconductor patterns spaced apart from each other in the second direction on each of the bit line structures, insulating interlayer patterns between neighboring ones of the semiconductor patterns in the first direction, and word lines spaced apart from each other in the second direction on the bit line structures. Each word line extends in the first direction adjacent to the semiconductor patterns. The semiconductor device further includes capacitors disposed on and electrically connected to the semiconductor patterns, respectively. A seam extending in the second direction is formed in each of the insulating interlayer patterns.