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公开(公告)号：US20240210596A1
公开(公告)日：2024-06-27
申请号：US18510845
申请日：2023-11-16
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Jin Woo YI , Sung Jun LEE , Tae Kyung LEE , Sung Sun KIM , Young Kyo JUNG
IPC: G02B1/11
CPC classification number: G02B1/11
Abstract: A lens includes a lens unit; an anti-reflective (AR) coating layer, disposed on one surface of the lens unit, including a first coating layer and a second coating layer alternately stacked one or more times, wherein a refractive index of the first coating layer is different from a refractive index of the second coating layer; and an intermediate layer, disposed between the lens unit and the AR coating layer, is formed of a same material as the first coating layer or the second coating layer. The intermediate layer is disposed on the lens unit by chemical vapor deposition (CVD).
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公开(公告)号：US20200169246A1
公开(公告)日：2020-05-28
申请号：US16435621
申请日：2019-06-10
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Yoon KIM , Tae Kyung LEE , Sang Kee YOON , Sung Jun LEE , Chang Hyun LIM , Nam Jung LEE , Tae Hun LEE , Moon Chul LEE
Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.
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公开(公告)号：US20190356293A1
公开(公告)日：2019-11-21
申请号：US16400052
申请日：2019-05-01
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Yong Suk KIM , Moon Chul LEE , Sung Jun LEE , Chang Hyun LIM , Jae Hyoung GIL , Sang Hyun YI
Abstract: A bulk acoustic wave resonator includes a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the lower electrode; an upper electrode disposed to cover at least a portion of the piezoelectric layer; and a passivation layer disposed to cover at least a portion of the upper electrode, wherein the passivation layer includes a non-trimming-processed portion disposed outside an active region of the bulk acoustic wave resonator in which portions of the lower electrode, the piezoelectric layer, and the upper electrode overlap, and having a thickness that is thicker than a thickness of a portion of the passivation layer disposed in the active region.
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公开(公告)号：US20150135497A1
公开(公告)日：2015-05-21
申请号：US14610919
申请日：2015-01-30
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Seung Mo LIM , Yun Sung KANG , Sung Jun LEE , Sang Jin KIM , Jung Won LEE , Kyo Yeol LEE
CPC classification number: H01L41/25 , G01P15/0802 , G01P15/09 , H01L41/0475 , H01L41/0825 , H01L41/1138 , H01L41/257 , H01L41/29 , H01L41/35 , Y10T29/42
Abstract: Disclosed herein are an inertial sensor and a method of manufacturing the same. The inertial sensor 100 according to a preferred embodiment of the present invention may include a membrane 110, a piezoelectric body 130 formed over the membrane 110, an electrode 140 formed on the piezoelectric body 130, a first pad 150 electrically connected with the electrode 140, a second pad 160 electrically connected with an integrated circuit 170, and a connection member 180 electrically connecting the first pad 150 with the second pad 160.
Abstract translation: 这里公开了惯性传感器及其制造方法。 根据本发明的优选实施例的惯性传感器100可包括膜110，形成在膜110上的压电体130，形成在压电体130上的电极140，与电极140电连接的第一焊盘150， 与集成电路170电连接的第二焊盘160以及将第一焊盘150与第二焊盘160电连接的连接部件180。
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公开(公告)号：US20240080011A1
公开(公告)日：2024-03-07
申请号：US18112609
申请日：2023-02-22
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Moon Chul LEE , Jae Hyoung GIL , Kwang Su KIM , Sung Jun LEE , Yong Suk KIM , Dong Hyun PARK , Tae Kyung LEE
Abstract: A bulk-acoustic wave (BAW) resonator includes a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion extending externally from the central portion, and an insertion layer and a loss prevention film are disposed in the extension portion between the substrate and the second electrode. The loss prevention film is formed to have a thickness of 50 Å to 500 Å. The insertion layer is stacked on the loss prevention film, and has a side surface opposing the central portion, the side surface is formed as a first inclined surface having a first inclination angle. The loss prevention film has a side surface opposing the central portion, the side surface is formed as a second inclined surface having a second inclination angle. The second inclination angle is formed to be greater than the first inclination angle.
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Patent Agency Ranking
公开(公告)号：US20180205360A1
公开(公告)日：2018-07-19
申请号：US15812842
申请日：2017-11-14
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Won HAN , Dae Ho KIM , Yong Suk KIM , Seung Hun HAN , Moon Chul LEE , Chang Hyun LIM , Sung Jun LEE , Sang Kee YOON , Tae Yoon KIM , Sang Uk SON
CPC classification number: H03H9/02118 , H03H3/02 , H03H9/02015 , H03H9/02157 , H03H9/132 , H03H9/17 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.
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公开(公告)号：US20180152168A1
公开(公告)日：2018-05-31
申请号：US15789024
申请日：2017-10-20
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Won HAN , Chang Hyun LIM , Yong Suk KIM , Seung Hun HAN , Sung Jun LEE , Sang Kee YOON , Tae Yoon KIM
IPC: H03H9/02 , H03H9/17 , H01L41/047
CPC classification number: H03H9/02007 , H01L41/047 , H03H9/02015 , H03H9/02118 , H03H9/02157 , H03H9/17 , H03H9/173 , H03H9/174 , H03H9/54
Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.
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公开(公告)号：US20230216470A1
公开(公告)日：2023-07-06
申请号：US17824145
申请日：2022-05-25
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Won HAN , Hwa Sun LEE , Jeong Hoon RYOU , Moon Chul LEE , Tae Yoon KIM , Sang Kee YOON , Yong Suk KIM , Joung Hun KIM , Sung Jun LEE , Sung Joon PARK
CPC classification number: H03H9/0211 , H03H9/173 , H03H9/02102
Abstract: A bulk acoustic wave resonator includes a substrate; a central portion including a first portion of a first electrode, a first portion of a piezoelectric layer, and a first portion of a second electrode laminated in order on the substrate; and a reflective region disposed laterally of the central portion and including a second portion of the first electrode, an insertion layer, a second portion of the piezoelectric layer, and a second portion of the second electrode. A side surface of the insertion layer adjacent to the central portion has an inclined surface, the first portion of the second electrode and the second portion of the second electrode are coplanar, and an end of the second electrode overlaps the inclined surface of the insertion layer in the reflective region.
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公开(公告)号：US20210313955A1
公开(公告)日：2021-10-07
申请号：US16942913
申请日：2020-07-30
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Chang Hyun LIM , Sang Hyun YI , Yong Suk KIM , Sung Jun LEE , Jae Hyoung GIL , Dong Hyun PARK
Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a protective layer disposed to cover at least the metal pad.
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公开(公告)号：US20200252046A1
公开(公告)日：2020-08-06
申请号：US16418107
申请日：2019-05-21
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Ran Hee SHIN , Tae Kyung LEE , Sung Jun LEE , Hwa Sun LEE , Je Hong KYOUNG , Sung Sun KIM , Jin Suk SON
Abstract: A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.
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