DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20240389395A1

    公开(公告)日:2024-11-21

    申请号:US18421611

    申请日:2024-01-24

    Abstract: A display device includes: a first display area comprising a plurality of emission areas configured to emit light; and a second display area adjacent to the first display area, wherein the second display area includes: a plurality of emission areas; a transmission portion configured to transmit light; a thin film transistor on a substrate; a pixel defining layer on the thin film transistor to define the plurality of emission areas and including a flat portion having a flat upper surface and a tapered portion having an upper surface inclined from the upper surface of the flat portion; and a pixel electrode on the thin film transistor to be exposed by the pixel defining layer and completely overlapping the tapered portion.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20210013280A1

    公开(公告)日:2021-01-14

    申请号:US16839796

    申请日:2020-04-03

    Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

    DISPLAY DEVICE
    4.
    发明申请

    公开(公告)号:US20220293886A1

    公开(公告)日:2022-09-15

    申请号:US17685305

    申请日:2022-03-02

    Abstract: A display device includes: a first substrate; a second substrate disposed on the first substrate and including a plurality of voids; at least one inorganic layer disposed on the second substrate; at least one transistor disposed on the at least one inorganic layer; and a light-emitter disposed on the at least one transistor. The second substrate is in contact with the at least one inorganic layer and has a dielectric constant less than a dielectric constant of the at least one inorganic layer.

    DISPLAY DEVICE
    5.
    发明申请

    公开(公告)号:US20220165825A1

    公开(公告)日:2022-05-26

    申请号:US17410699

    申请日:2021-08-24

    Abstract: A display device is provided. The display device comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, a first sub-substrate disposed on the second base substrate and comprising at least one dopant selected from a group consisting of: fluorine (F), boron (B), arsenic (As), phosphorus (P), chlorine (Cl), bromine (Br), iodine (I), astatine (At), sulfur (S), selenium (Se), argon (Ar), and tellurium (Te), a second barrier layer disposed on the first sub-substrate, a second buffer layer disposed on the second barrier layer, a first buffer layer disposed on the second buffer layer, at least one transistor disposed on the first buffer layer, and an organic light-emitting diode disposed on the at least one transistor.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20220262885A1

    公开(公告)日:2022-08-18

    申请号:US17739010

    申请日:2022-05-06

    Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

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