公开(公告)号：US20180047762A1

公开(公告)日：2018-02-15

申请号：US15671638

申请日：2017-08-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joon-Hwa BAE ,  Byoung Kwon CHOO ,  Byung Hoon KANG ,  Woo Jin CHO ,  Hyun Jin CHO ,  Jun Hyuk CHEON ,  Jee-Hyun LEE

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L27/1285 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02675 ,  H01L21/02697 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76834 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78672 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.