DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20200243632A1

    公开(公告)日:2020-07-30

    申请号:US16843489

    申请日:2020-04-08

    Abstract: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    4.
    发明申请

    公开(公告)号:US20180069069A1

    公开(公告)日:2018-03-08

    申请号:US15490661

    申请日:2017-04-18

    Abstract: An organic light emitting diode display includes a substrate, a plurality of pixels disposed on the substrate, and a plurality of transmitting windows configured to transmit light therethrough. The plurality of transmitting windows is spaced apart from the plurality of pixels. Each of the plurality of pixels includes a transistor and a capacitor. The transistor includes a light-blocking electrode disposed on the substrate and a plurality of electrode members disposed at different layers on the light-blocking electrode. The capacitor includes a first capacitor electrode disposed on a same layer as the light-blocking electrode, and a second capacitor electrode disposed on a same layer as a first one of the plurality of electrode members to overlap the first capacitor electrode.

    THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE HAVING THE SAME

    公开(公告)号:US20180130827A1

    公开(公告)日:2018-05-10

    申请号:US15635479

    申请日:2017-06-28

    Abstract: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.

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