-
1.
公开(公告)号:US20190189647A1
公开(公告)日:2019-06-20
申请号:US16275829
申请日:2019-02-14
发明人: JUN HEE LEE , IN JUN BAE
IPC分类号: H01L27/12 , H01L29/786
CPC分类号: H01L27/1248 , H01L27/1222 , H01L27/1262 , H01L27/3262 , H01L27/3272 , H01L29/78618 , H01L29/78633 , H01L29/78696
摘要: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.
-
2.
公开(公告)号:US20180130827A1
公开(公告)日:2018-05-10
申请号:US15635479
申请日:2017-06-28
发明人: JUN HEE LEE , IN JUN BAE
IPC分类号: H01L27/12
CPC分类号: H01L27/1248 , H01L27/1222 , H01L27/1262 , H01L27/3262 , H01L29/78618 , H01L29/78633 , H01L29/78696
摘要: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.
-
公开(公告)号:US20200243632A1
公开(公告)日:2020-07-30
申请号:US16843489
申请日:2020-04-08
发明人: JUN HEE LEE , IN JUN BAE , KOHEI EBISUNO
IPC分类号: H01L27/32 , G09G3/3233 , H01L29/786 , H01L29/04 , G09G3/3291 , G09G3/3266 , G09G3/3258 , G09G3/3241
摘要: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.
-
公开(公告)号:US20180114823A1
公开(公告)日:2018-04-26
申请号:US15611482
申请日:2017-06-01
发明人: JUN HEE LEE , IN JUN BAE , Ebisuno Kohei
IPC分类号: H01L27/32 , H01L29/786 , H01L29/04 , G09G3/3258 , G09G3/3241 , G09G3/3291 , G09G3/3266
CPC分类号: H01L27/3262 , G09G3/3233 , G09G3/3241 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0452 , G09G2310/08 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L27/3248 , H01L27/3265 , H01L27/3272 , H01L27/3276 , H01L29/04 , H01L29/78606 , H01L29/78696 , H01L2227/323
摘要: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.
-
-
-