公开(公告)号：US20230271158A1

公开(公告)日：2023-08-31

申请号：US18006993

申请日：2021-07-26

申请人： SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN

发明人： Patrick NGUYEN VAN NUOI ,  Guillaume COMTE ,  Giovanni MASSASSO

IPC分类号： B01J20/22 ,  B01J20/08 ,  B01J20/28 ,  B01J20/30

CPC分类号： B01J20/226 ,  B01J20/08 ,  B01J20/3007 ,  B01J20/3042 ,  B01J20/3078 ,  B01J20/28026

摘要： A product based on a metal-organic framework (MOF) and the method for producing same, the product containing particles bound by a binder, the binder including boehmite, the particles being essentially MOF particles and, optionally, particles of a ceramic material other than boehmite.

公开(公告)号：US20240208871A1

公开(公告)日：2024-06-27

申请号：US18557132

申请日：2022-04-29

申请人： SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN

发明人： Giovanni MASSASSO ,  Costana BOUSQUET

IPC分类号： C04B35/575

CPC分类号： C04B35/575 ,  C04B2235/3834 ,  C04B2235/401 ,  C04B2235/402 ,  C04B2235/405 ,  C04B2235/721 ,  C04B2235/728 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/85

摘要： A polycrystalline sintered ceramic material of very low electrical resistivity includes by mass more than 95% silicon carbide (SiC), less than 1.5% silicon in another form than SiC, less than 2.5% carbon in another form than SiC, less than 1% oxygen (O), less than 0.5% aluminum (Al), less than 0.5% of the elements Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, less than 0.5% alkali elements, less than 0.5% alkaline earth, between 0.1 and 1.5% nitrogen (N), the other elements forming the complement to 100%, wherein the grains of the above material have a median equivalent diameter of between 0.5 and 5 micrometers, the mass ratio of SiC alpha (α)/SiC beta (β) is less than 0.1, and the total porosity represents less than 15% by volume of the material.

公开(公告)号：US20240217883A1

公开(公告)日：2024-07-04

申请号：US18557141

申请日：2022-04-29

申请人： SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN

发明人： Giovanni MASSASSO ,  Costana BOUSQUET

IPC分类号： C04B35/575 ,  C04B35/63

CPC分类号： C04B35/575 ,  C04B35/6303 ,  C04B2235/3821 ,  C04B2235/3834 ,  C04B2235/422 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6584 ,  C04B2235/666 ,  C04B2235/723 ,  C04B2235/725 ,  C04B2235/786

摘要： A polycrystalline silicon carbide sintered material includes silicon carbide grains having a median equivalent diameter of between 1 and 10 microns, the material having a total porosity of less than 2% by volume of the material, and a silicon carbide mass content of at least 99%, except for the free carbon, wherein in the material the mass ratio of the content of SiC having a beta-type crystallographic form to the content of SiC having an alpha-type crystallographic form is less than 2.