公开(公告)号：US09659867B2

公开(公告)日：2017-05-23

申请号：US15272553

申请日：2016-09-22

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US09490213B2

公开(公告)日：2016-11-08

申请号：US14702507

申请日：2015-05-01

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/52 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US10304726B2

公开(公告)日：2019-05-28

申请号：US16137972

申请日：2018-09-21

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US09818639B2

公开(公告)日：2017-11-14

申请号：US15469730

申请日：2017-03-27

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US08617981B2

公开(公告)日：2013-12-31

申请号：US13862268

申请日：2013-04-12

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/52 ,  H01L21/4763

CPC classification number: H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US10121693B2

公开(公告)日：2018-11-06

申请号：US15727671

申请日：2017-10-09

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/52 ,  H01L21/768 ,  H01L23/532 ,  H01L23/485 ,  H01L23/522 ,  H01L23/528

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US08810034B2

公开(公告)日：2014-08-19

申请号：US14095817

申请日：2013-12-03

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/52

CPC classification number: H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract translation: 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US09064870B2

公开(公告)日：2015-06-23

申请号：US14320049

申请日：2014-06-30

Applicant: Renesas Electronics Corporation

Inventor： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC: H01L23/52 ,  H01L23/522 ,  H01L21/314 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract translation: 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜的阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜粘合性优异的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。