公开(公告)号：US20250037744A1

公开(公告)日：2025-01-30

申请号：US18777820

申请日：2024-07-19

Applicant: Renesas Electronics Corporation

Inventor： Toshiki KIRYU ,  Toma OGATA ,  Kosuke YAYAMA ,  Toyohiro SHIMOGAWA

IPC: G11C5/14 ,  G11C7/22 ,  H02M3/158

Abstract: While suppressing the influence of voltage noise, the adjustment range of the power supply voltage generated based on the reference voltage is expanded. The semiconductor device includes a reference voltage generation circuit, a regulator, a buffer, and a voltage control circuit. The reference voltage generation circuit is configured to be able to adjust the reference voltage. The regulator is configured to be able to change the output ratio of the power supply voltage to the reference voltage based on the control signal. The semiconductor device further includes a voltage control circuit for outputting a voltage control signal to the regulator to switch the output ratio.