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公开(公告)号:US20180108629A1
公开(公告)日:2018-04-19
申请号:US15844223
申请日:2017-12-15
Applicant: Renesas Electronics Corporation
Inventor: Kentaro YAMADA , Shigeki TOMARU , Taketoshi FUKUSHIMA
IPC: H01L23/00 , H01L23/498 , H01L23/528
Abstract: To improve the reliability of a semiconductor device.The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad formed on an uppermost wiring layer of the plurality of wiring layers, a surface protection film which includes an opening on the pad and is made of an inorganic insulating film, a rewiring formed on the surface protection film; a pad electrode formed on the rewiring, and a wire connected to the pad electrode. The rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view.
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2.
公开(公告)号:US20160240499A1
公开(公告)日:2016-08-18
申请号:US15004983
申请日:2016-01-24
Applicant: Renesas Electronics Corporation
Inventor: Kentaro YAMADA , Shigeki TOMARU , Taketoshi FUKUSHIMA
IPC: H01L23/00 , H01L23/498
CPC classification number: H01L24/06 , H01L23/5286 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/03462 , H01L2224/0347 , H01L2224/03914 , H01L2224/04042 , H01L2224/05008 , H01L2224/05014 , H01L2224/05018 , H01L2224/05019 , H01L2224/05022 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05558 , H01L2224/05564 , H01L2224/05644 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/48247 , H01L2224/48463 , H01L2224/48844 , H01L2224/49175 , H01L2224/78301 , H01L2224/85181 , H01L2224/85206 , H01L2924/00012 , H01L2924/00014 , H01L2924/10162 , H01L2924/10253 , H01L2924/1306 , H01L2924/181 , H01L2924/35121
Abstract: To improve the reliability of a semiconductor device.The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad formed on an uppermost wiring layer of the plurality of wiring layers, a surface protection film which includes an opening on the pad and is made of an inorganic insulating film, a rewiring formed on the surface protection film; a pad electrode formed on the rewiring, and a wire connected to the pad electrode. The rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view.
Abstract translation: 提高半导体器件的可靠性。 半导体器件包括形成在半导体衬底上的多个布线层,形成在多个布线层的最上布线层上的焊盘,表面保护膜,其在焊盘上包括开口,由无机绝缘膜制成, 在表面保护膜上形成重新布线; 在重新布线上形成的焊盘电极和连接到焊盘电极的电线。 重新配线包括焊盘电极安装部分,焊盘电极安装在该焊盘电极安装部分上,连接到焊盘的连接部分和连接焊盘电极安装部分和连接部分的延伸布线部分和焊盘电极安装部分 在平面图中看到的矩形。
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