公开(公告)号：US20180248492A1

公开(公告)日：2018-08-30

申请号：US15965178

申请日：2018-04-27

Applicant: Renesas Electronics Corporation

Inventor： Daisuke KONDO ,  Koji TATENO ,  Chang LIU ,  Nao NAGATA

IPC: H02M5/458 ,  H01L29/00 ,  H02M1/08 ,  H03K17/12 ,  H03K17/567 ,  H03K17/61 ,  H03K17/691 ,  H03K17/795

CPC classification number: H02M5/458 ,  H01L29/00 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7396 ,  H01L29/7397 ,  H02M1/08 ,  H03K17/127 ,  H03K17/168 ,  H03K17/567 ,  H03K17/61 ,  H03K17/691 ,  H03K17/7955 ,  H03K2217/0081

Abstract: A power conversion device includes a high-side transistor including an IGBT, a low-side transistor including an IGBT, and having a collector coupled to an emitter of the high-side transistor, a high-side driver configured to drive the high-side transistor; and a low-side driver configured to drive the low-side transistor, wherein each of the high-side transistor and the low-side transistor includes a first trench gate electrode arranged in an active cell region, and electrically connected to a gate, and a second trench gate electrode and a third trench gate electrode, each of which is arranged at intervals on both sides of the first trench gate electrode, and electrically connected to the emitter in the active cell region. The high-side driver includes a first pull-up transistor configured to apply a first voltage as a positive voltage to the gate, based on the emitter of the high-side transistor and a first pull-down transistor.