公开(公告)号：US09343328B2

公开(公告)日：2016-05-17

申请号：US14589251

申请日：2015-01-05

Applicant: Raytheon Company

Inventor： Paul J. Duval ,  Paul M. Ryan ,  Christopher J. MacDonald

IPC: H01L21/32 ,  H01L21/768 ,  H01L29/78 ,  H01L21/027 ,  H01L21/28 ,  H01L21/311

CPC classification number: H01L21/32 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31144 ,  H01L21/76895 ,  H01L29/78

Abstract: A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

Abstract translation: 具有基板的半导体结构; 有源器件形成在衬底的有源半导体区域中，所述有源器件具有用于控制通过一对电触点之间的有源半导体区域的载流子流动的控制电极; 以及设置在有源半导体区域的表面衬底上的光刻，厚度不均匀的补偿特征。 在一个实施例中，该特征包括衬底的表面上的焊盘和有源半导体区域的焊盘。

公开(公告)号：US20150111379A1

公开(公告)日：2015-04-23

申请号：US14589251

申请日：2015-01-05

Applicant: Raytheon Company

Inventor： Paul J. Duval ,  Paul M. Ryan ,  Christopher J. MacDonald

IPC: H01L21/32 ,  H01L21/768

CPC classification number: H01L21/32 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31144 ,  H01L21/76895 ,  H01L29/78

Abstract: A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

Abstract translation: 具有基板的半导体结构; 有源器件形成在衬底的有源半导体区域中，所述有源器件具有用于控制通过一对电触点之间的有源半导体区域的载流子流动的控制电极; 以及设置在有源半导体区域的表面衬底上的光刻，厚度不均匀的补偿特征。 在一个实施例中，该特征包括衬底的表面上的焊盘和有源半导体区域的焊盘。

公开(公告)号：US20150097290A1

公开(公告)日：2015-04-09

申请号：US14045974

申请日：2013-10-04

Applicant: Raytheon Company

Inventor： Barry J. Liles ,  Kamal Tabatabale ,  Frederick A. Rose ,  Christopher J. MacDonald ,  Paul M. Ryan ,  Kurt V. Smith ,  Irl W. Smith

IPC: H01L23/532

CPC classification number: H01L23/53238 ,  H01L23/4821 ,  H01L29/41758 ,  H01L29/8124 ,  H01L2924/13063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure having first and second electrical conductors disposed on a surface of the structure and a bridging conductor connected between the first electrical conductor and the second electrical conductor with portions disposed over the surface of the structure. The bridging conductor includes a plurality of stacked, multi-metal layers, each one of the multi-metal layers having: an electrically conductive layer; and a pair of barrier metal layers, the electrically conductive layer being disposed between and in direct contact with the pair of barrier metal layers.

Abstract translation: 一种结构，其具有布置在该结构的表面上的第一和第二电导体以及连接在第一电导体和第二电导体之间的桥接导体，其中部分设置在该结构的表面上。 桥接导体包括多个层叠的多金属层，每个多金属层具有：导电层; 以及一对势垒金属层，所述导电层设置在所述一对势垒金属层之间并与所述一对势垒金属层直接接触。

公开(公告)号：US20140319586A1

公开(公告)日：2014-10-30

申请号：US13871190

申请日：2013-04-26

Applicant: RAYTHEON COMPANY

Inventor： Paul J. Duval ,  Paul M. Ryan ,  Christopher J. MacDonald

IPC: H01L21/321 ,  H01L29/78

CPC classification number: H01L21/32 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31144 ,  H01L21/76895 ,  H01L29/78

Abstract: A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

Abstract translation: 具有基板的半导体结构; 有源器件形成在衬底的有源半导体区域中，所述有源器件具有用于控制通过一对电触点之间的有源半导体区域的载流子流动的控制电极; 以及设置在有源半导体区域的表面衬底上的光刻，厚度不均匀的补偿特征。 在一个实施例中，该特征包括衬底的表面上的焊盘和有源半导体区域的焊盘。