公开(公告)号：US20110133842A1

公开(公告)日：2011-06-09

申请号：US12959983

申请日：2010-12-03

申请人： Ranieri Guerra ,  Giuseppe Palmisano

发明人： Ranieri Guerra ,  Giuseppe Palmisano

IPC分类号： H03F3/04

CPC分类号： H03F1/26 ,  H03F1/483 ,  H03F2200/294

摘要： A radio-frequency amplifier includes a common gate amplification stage configured to be biased in a saturation condition with a first current and configured to receive an input signal as a gate-source voltage and to generate an output voltage as an amplified replica of the input signal. A feedback transistor is configured to be biased in a saturation condition with a second current and coupled to the common gate amplification stage so as to have a gate-drain voltage corresponding to a difference between the output voltage and the input signal.

摘要翻译： 射频放大器包括公共栅极放大级，其被配置为利用第一电​​流被偏置在饱和状态，并被配置为接收作为栅极 - 源极电压的输入信号，并且产生作为输入信号的放大副本的输出电压 。 反馈晶体管被配置为利用第二电流偏置在饱和状态，并耦合到公共栅极放大级，以便具有对应于输出电压和输入信号之间的差的栅极 - 漏极电压。

公开(公告)号：US08195104B2

公开(公告)日：2012-06-05

申请号：US12643373

申请日：2009-12-21

申请人： Ranieri Guerra ,  Giuseppe Palmisano

发明人： Ranieri Guerra ,  Giuseppe Palmisano

IPC分类号： H04B1/04

CPC分类号： H03F3/45273 ,  H03F3/3022 ,  H03F3/45183 ,  H03F2203/45008 ,  H03F2203/45481 ,  Y10T29/49826

摘要： The disclosure relates to an electronic differential amplification device integrated on a semiconductor chip. The device may include first and second transistors having respective source terminals connected to a first potential, and drain terminals to receive a first differential current signal. The device may include third and fourth transistors having respective source terminals connected to the first potential, and drain terminals to provide a second differential current signal to a load obtained by amplifying the first signal. The third and fourth transistors may have a respective gate terminal connected to the drain terminal of the first and the second transistors, respectively, in order to form current mirrors with the latter. The device is characterized in that the first and second transistors may have the respective gate terminals electrically connected to a common terminal, and at least one first and at least one second resistive elements are connected between the common terminal and the drain terminals of the first and the second transistors, respectively.

摘要翻译： 本公开涉及集成在半导体芯片上的电子差分放大装置。 器件可以包括具有连接到第一电位的相应源极端子的第一和第二晶体管以及用于接收第一差分电流信号的漏极端子。 器件可以包括具有连接到第一电位的相应源极端子的第三和第四晶体管，以及用于通过放大第一信号而获得的负载来提供第二差分电流信号的漏极端子。 第三和第四晶体管可以具有相应的栅极端子，分别连接到第一和第二晶体管的漏极端子，以便与后者形成电流镜。 该器件的特征在于，第一和第二晶体管可以具有电连接到公共端子的相应的栅极端子，并且至少一个第一和至少一个第二电阻元件连接在第一和第二晶体管的公共端子和漏极端子之间， 第二晶体管。

公开(公告)号：US20100159853A1

公开(公告)日：2010-06-24

申请号：US12643373

申请日：2009-12-21

申请人： Ranieri Guerra ,  Giuseppe Palmisano

发明人： Ranieri Guerra ,  Giuseppe Palmisano

IPC分类号： H04B1/034 ,  H03F3/45 ,  B23P11/00

CPC分类号： H03F3/45273 ,  H03F3/3022 ,  H03F3/45183 ,  H03F2203/45008 ,  H03F2203/45481 ,  Y10T29/49826

摘要： The disclosure relates to an electronic differential amplification device integrated on a semiconductor chip. The device may include first and second transistors having respective source terminals connected to a first potential, and drain terminals to receive a first differential current signal. The device may include third and fourth transistors having respective source terminals connected to the first potential, and drain terminals to provide a second differential current signal to a load obtained by amplifying the first signal. The third and fourth transistors may have a respective gate terminal connected to the drain terminal of the first and the second transistors, respectively, in order to form current mirrors with the latter. The device is characterized in that the first and second transistors may have the respective gate terminals electrically connected to a common terminal, and at least one first and at least one second resistive elements are connected between the common terminal and the drain terminals of the first and the second transistors, respectively.

摘要翻译： 本公开涉及集成在半导体芯片上的电子差分放大装置。 器件可以包括具有连接到第一电位的相应源极端子的第一和第二晶体管以及用于接收第一差分电流信号的漏极端子。 器件可以包括具有连接到第一电位的相应源极端子的第三和第四晶体管，以及用于通过放大第一信号而获得的负载来提供第二差分电流信号的漏极端子。 第三和第四晶体管可以具有相应的栅极端子，分别连接到第一和第二晶体管的漏极端子，以便与后者形成电流镜。 该器件的特征在于，第一和第二晶体管可以具有电连接到公共端子的相应的栅极端子，并且至少一个第一和至少一个第二电阻元件连接在第一和第二晶体管的公共端子和漏极端子之间， 第二晶体管。

公开(公告)号：US08279000B2

公开(公告)日：2012-10-02

申请号：US12959983

申请日：2010-12-03

申请人： Ranieri Guerra ,  Giuseppe Palmisano

发明人： Ranieri Guerra ,  Giuseppe Palmisano

IPC分类号： H03F1/34

CPC分类号： H03F1/26 ,  H03F1/483 ,  H03F2200/294

摘要： A radio-frequency amplifier includes a common gate amplification stage configured to be biased in a saturation condition with a first current and configured to receive an input signal as a gate-source voltage and to generate an output voltage as an amplified replica of the input signal. A feedback transistor is configured to be biased in a saturation condition with a second current and coupled to the common gate amplification stage so as to have a gate-drain voltage corresponding to a difference between the output voltage and the input signal.

摘要翻译： 射频放大器包括公共栅极放大级，其被配置为利用第一电​​流被偏置在饱和状态，并被配置为接收作为栅极 - 源极电压的输入信号，并且产生作为输入信号的放大副本的输出电压 。 反馈晶体管被配置为利用第二电流偏置在饱和状态，并耦合到公共栅极放大级，以便具有对应于输出电压和输入信号之间的差的栅极 - 漏极电压。