公开(公告)号：US20190259912A1

公开(公告)日：2019-08-22

申请号：US16398958

申请日：2019-04-30

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI

IPC: H01L33/24 ,  H01L33/42 ,  H01L33/38 ,  H01L33/62 ,  H01L33/40 ,  H01L33/32 ,  H01L33/56 ,  H01L33/44

Abstract: In a light-emitting element (1), a light-emitting layer (4), a second conductivity type semiconductor layer (5), a transparent electrode layer (6), a reflecting electrode layer (7) and an insulating layer (8) are stacked in this order on a first conductivity type semiconductor layer (3), while a first electrode layer (10) and a second electrode layer (12) are stacked on the insulating layer (8) in an isolated state. The light-emitting element (1) includes a plurality of insulating tube layers (9), discretely arranged in plan view, passing through the reflecting electrode layer (7), the transparent electrode layer (6), the second conductivity type semiconductor layer (5) and the light-emitting layer (4) continuously from the insulating layer (8) and reaching the first conductivity type semiconductor layer (3), first contacts (11), continuous from the first electrode layer (10), connected to the first conductivity type semiconductor layer (3) through the insulating layer (8) and the insulating tube layers (9), and second contacts (13), continuous from the second electrode layer (12), passing through the insulating layer (8) to be connected to the reflecting electrode layer (7).

公开(公告)号：US20170098734A1

公开(公告)日：2017-04-06

申请号：US15387925

申请日：2016-12-22

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/56 ,  H01L33/44 ,  H01L33/32 ,  H01L33/62 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: In a light-emitting element (1), a light-emitting layer (4), a second conductivity type semiconductor layer (5), a transparent electrode layer (6), a reflecting electrode layer (7) and an insulating layer (8) are stacked in this order on a first conductivity type semiconductor layer (3), while a first electrode layer (10) and a second electrode layer (12) are stacked on the insulating layer (8) in an isolated state. The light-emitting element (1) includes a plurality of insulating tube layers (9), discretely arranged in plan view, passing through the reflecting electrode layer (7), the transparent electrode layer (6), the second conductivity type semiconductor layer (5) and the light-emitting layer (4) continuously from the insulating layer (8) and reaching the first conductivity type semiconductor layer (3), first contacts (11), continuous from the first electrode layer (10), connected to the first conductivity type semiconductor layer (3) through the insulating layer (8) and the insulating tube layers (9), and second contacts (13), continuous from the second electrode layer (12), passing through the insulating layer (8) to be connected to the reflecting electrode layer (7).

公开(公告)号：US20140239340A1

公开(公告)日：2014-08-28

申请号：US14173408

申请日：2014-02-05

Applicant: ROHM CO., LTD.

Inventor： Takao FUJIMORI ,  Nobuaki MATSUI

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05644 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: The light emitting device includes: a substrate; a first conductive-type semiconductor layer laminated on the substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer, a second ITO layer, a first metal layer and a second metal layer. The first ITO layer is laminated at a side of the first conductive-type semiconductor layer opposite to the substrate. The second ITO layer is laminated at a side of the second conductive-type semiconductor layer opposite to the substrate. The first metal layer is laminated on the first ITO layer. The second metal layer is laminated on the second ITO layer.

Abstract translation: 发光装置包括：基板; 层叠在所述基板上的第一导电型半导体层; 层叠在所述第一导电型半导体层上的发光层; 层叠在发光层上的第二导电型半导体层; 第一ITO层，第二ITO层，第一金属层和第二金属层。 在第一导电型半导体层的与衬底相对的一侧层叠第一ITO层。 第二ITO层层叠在与基板相对的第二导电型半导体层的一侧。 第一金属层层叠在第一ITO层上。 第二金属层层叠在第二ITO层上。

公开(公告)号：US20160181489A1

公开(公告)日：2016-06-23

申请号：US15054110

申请日：2016-02-25

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

IPC: H01L33/60 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

公开(公告)号：US20160005929A1

公开(公告)日：2016-01-07

申请号：US14856599

申请日：2015-09-17

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI

IPC: H01L33/40 ,  H01L33/42

CPC classification number: H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state. The light-emitting element 1 includes a plurality of insulating tube layers 9, discretely arranged in plan view, passing through the reflecting electrode layer 7, the transparent electrode layer 6, the second conductivity type semiconductor layer 5 and the light-emitting layer 4 continuously from the insulating layer 8 and reaching the first conductivity type semiconductor layer 3, first contacts 11, continuous from the first electrode layer 10, connected to the first conductivity type semiconductor layer 3 through the insulating layer 8 and the insulating tube layers 9, and second contacts 13, continuous from the second electrode layer 12, passing through the insulating layer 8 to be connected to the reflecting electrode layer 7.

公开(公告)号：US20140203318A1

公开(公告)日：2014-07-24

申请号：US14159578

申请日：2014-01-21

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Seiji KAMIDA ,  Tadateru SHIBATA

IPC: H01L33/60 ,  H01L33/44

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light emitting element includes: a sapphire substrate having a front surface and a rear surface opposite the front surface; a first conductive type semiconductor layer stacked on the front surface of the sapphire substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; a reflective layer which contains Ag and is disposed on the rear surface of the sapphire substrate, the reflective layer reflecting light from the sapphire substrate toward the front surface of the sapphire substrate; and an adhesive layer which is interposed between the sapphire substrate and the reflective layer and is made of ITO, the adhesive layer being adhered to the reflective layer.

Abstract translation: 发光元件包括：具有前表面和与前表面相对的后表面的蓝宝石衬底; 堆叠在所述蓝宝石衬底的前表面上的第一导电类型半导体层; 堆叠在所述第一导电类型半导体层上的发光层; 层叠在所述发光层上的第二导电型半导体层; 反射层，其包含Ag并且设置在蓝宝石衬底的背面上，反射层将来自蓝宝石衬底的光反射到蓝宝石衬底的前表面; 以及介于蓝宝石基板和反射层之间并由ITO制成的粘合剂层，粘合剂层粘附到反射层。

公开(公告)号：US20190387591A1

公开(公告)日：2019-12-19

申请号：US16480327

申请日：2018-01-31

Applicant: ROHM CO., LTD.

Inventor： Kenichi FUKUMOTO ,  Koji Katsura ,  Ryosuke Kanemitsu ,  Junichi ITAI ,  Nobuaki MATSUI ,  Seiji NAKASHIMA ,  Kouji Miyamoto

IPC: H05B33/08

Abstract: An LED drive circuit drives an LED module. The LED module has a light-emitting diode, and an identification unit having characteristic information relating to light-emitting characteristics of the light-emitting diode. The LED drive circuit includes a detection unit and a drive circuit. The detection unit is provided for detecting characteristic information, and generates a detection signal that corresponds to the characteristic information. The drive circuit generates drive current by a drive signal supplied according to the characteristic information based on the detection signal, and supplies the drive current to drive the light-emitting diode.

公开(公告)号：US20180083172A1

公开(公告)日：2018-03-22

申请号：US15825851

申请日：2017-11-29

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

IPC: H01L33/60 ,  H01L33/22 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

公开(公告)号：US20150270461A1

公开(公告)日：2015-09-24

申请号：US14730796

申请日：2015-06-04

Applicant: ROHM CO., LTD.

Inventor： Takao FUJIMORI ,  Yasuo NAKANISHI ,  Nobuaki MATSUI ,  Hirotaka OBUCHI

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/60 ,  F21V7/00 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16225

Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Abstract translation: 根据本发明的发光元件单元包括具有表面，后表面和侧表面的半导体发光元件，其中表面或背表面是从其发射的光的光提取表面， 具有底壁和侧壁的基座具有由底壁和侧壁限定的凹部，并且通过底壁将光提取表面向上指向的位置支撑半导体发光元件 所述凹部具有在所述侧壁上的倾斜面，相对于所述底壁以与所述半导体发光元件的侧面相对的方式倾斜预定角度，并且形成在所述倾斜面上的光反射膜 底座。

公开(公告)号：US20140191270A1

公开(公告)日：2014-07-10

申请号：US14203385

申请日：2014-03-10

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

IPC: H01L33/22

CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Abstract translation: 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。