公开(公告)号：US20160181489A1

公开(公告)日：2016-06-23

申请号：US15054110

申请日：2016-02-25

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

IPC: H01L33/60 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

公开(公告)号：US20170331004A1

公开(公告)日：2017-11-16

申请号：US15586613

申请日：2017-05-04

Applicant: ROHM CO., LTD.

Inventor： Takao FUJIMORI ,  Kazuaki TSUTSUMI ,  Hirotaka OBUCHI

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a substrate having a first major surface and a second major surface, a semiconductor layer that includes a first semiconductor layer of a first conductive type formed on the first major surface of the substrate, a light emitting layer formed on the first semiconductor layer and a second semiconductor layer of a second conductive type formed on the light emitting layer, and a mesa structure formed in the semiconductor layer by selectively notching the first semiconductor layer, the light emitting layer and the second semiconductor layer so as to expose the first semiconductor layer, and a ratio of a luminescent area of the light emitting layer with respect to an area of the first major surface of the substrate being set to equal to or smaller than 0.25.

公开(公告)号：US20180083172A1

公开(公告)日：2018-03-22

申请号：US15825851

申请日：2017-11-29

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

IPC: H01L33/60 ,  H01L33/22 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

公开(公告)号：US20140191270A1

公开(公告)日：2014-07-10

申请号：US14203385

申请日：2014-03-10

Applicant: ROHM CO., LTD.

Inventor： Nobuaki MATSUI ,  Hirotaka OBUCHI ,  Yasuo NAKANISHI ,  Kazuaki TSUTSUMI ,  Takao FUJIMORI

IPC: H01L33/22

CPC classification number: H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Abstract translation: 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。

公开(公告)号：US20170352781A1

公开(公告)日：2017-12-07

申请号：US15610983

申请日：2017-06-01

Applicant: ROHM CO., LTD.

Inventor： Hirotaka OBUCHI ,  Kazuaki TSUTSUMI ,  Hideaki ANZAI ,  Takao FUJIMORI

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/10 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486

Abstract: A semiconductor light emitting element is disclosed. The element includes a substrate including a first surface, a second surface opposite to the first surface, and a side surface that connects the first surface and the second surface; a semiconductor layer formed on the first surface of the substrate and configured to generate light; and a light reflective layer formed on the second surface of the substrate to cover an entire region of the second surface of the substrate and configured to reflect the light generated by the semiconductor layer toward the semiconductor layer. A modified layer, which has a physical property different from that of the other portion of the substrate, is formed on the side surface of the substrate to be spaced apart from the first surface toward the second surface by altering a material forming the substrate.

公开(公告)号：US20160343900A1

公开(公告)日：2016-11-24

申请号：US15154397

申请日：2016-05-13

Applicant: ROHM CO., LTD.

Inventor： Hirotaka OBUCHI ,  Kazuaki TSUTSUMI

IPC: H01L33/06 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L33/325 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes: an n-type layer; a p-type layer; and an emission layer interposed between the n-type layer and the p-type layer and having a multiple quantum well (MQW) structure in which barrier layers and quantum well layers are alternately stacked over a plurality of periods, wherein n-type impurity concentrations of the barrier layers disposed up to a predetermined α-th layer (where a is a natural number), when counting from the p-type layer, are smaller than an n-type impurity concentration of the barrier layer disposed at an (α+1)-th layer counting from the p-type layer.

Abstract translation: 一种半导体发光器件包括：n型层; p型层; 以及插入在n型层和p型层之间并具有多个量子阱（MQW）结构的发射层，其中阻挡层和量子阱层在多个周期上交替堆叠，其中n型杂质浓度 设置在预定的α层（其中a为自然数）的阻挡层当从p型层计数时小于设置在（α+）层的阻挡层的n型杂质浓度， 1层）从p型层计数。