公开(公告)号：US20200227301A1

公开(公告)日：2020-07-16

申请号：US16830298

申请日：2020-03-26

申请人： RFHIC Corporation

发明人： Daniel Francis ,  Frank Yantis Lowe ,  Michael Ian Pearson

IPC分类号： H01L21/683 ,  H01L21/20 ,  H01L21/02 ,  H01L29/16

摘要： The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 μm; a wafer bow of no more than 100 μm; and a wafer warp of no more than 40 μm.

公开(公告)号：US10699896B2

公开(公告)日：2020-06-30

申请号：US16383609

申请日：2019-04-14

申请人： RFHIC Corporation

发明人： Firooz Nasser-Faili ,  Daniel Francis ,  Frank Yantis Lowe ,  Daniel James Twitchen

IPC分类号： H01L21/02 ,  C23C16/27 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267

摘要： A method of fabricating a semiconductor device structure includes: providing a substrate comprising a layer of compound semiconductor material; forming a seed layer of nano-crystalline diamond having a layer thickness in a range 5 to 50 nm on the layer of compound semiconductor material; and growing a layer of polycrystalline CVD diamond on the seed layer using a chemical vapour deposition (CVD) technique. An effective thermal boundary resistance (TBReff) at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 m2K/GW.

公开(公告)号：US20190189533A1

公开(公告)日：2019-06-20

申请号：US16283787

申请日：2019-02-24

申请人： RFHIC Corporation

发明人： Frank Yantis LOWE ,  Daniel Francis ,  Firooz NASSER-FAILI ,  Daneil James Twitchen

IPC分类号： H01L23/373 ,  H01L21/02 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L23/3732 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/0237 ,  H01L21/02376 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/2003 ,  H01L29/7787

摘要： A semiconductor device structure comprising: a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material, wherein the layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm, wherein an effective thermal boundary resistance (TBReff) as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m2 K/GW with a variation of no more than 12 m2 K/GW as measured across the semiconductor device structure, and wherein the layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm2 V−1 s−1; and a sheet resistance of no more than 700 Ω/square.

公开(公告)号：US10446468B2

公开(公告)日：2019-10-15

申请号：US16283787

申请日：2019-02-24

申请人： RFHIC Corporation

发明人： Frank Yantis Lowe ,  Daniel Francis ,  Firooz Nasser-Faili ,  Daniel James Twitchen

IPC分类号： H01L23/373 ,  H01L21/02 ,  H01L29/20 ,  H01L29/778

摘要： Methods of fabricating compound semiconductor device structures having polycrystalline CVD diamond. The method includes: providing a substrate that has a layer of single crystal compound semiconductor material; forming a bonding layer on a surface of the substrate, the bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm; and growing a layer of polycrystalline diamond on the bonding layer using a chemical vapor deposition technique. The effective thermal boundary resistance at the interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m2K/GW. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm2V−1s−1; and a sheet resistance of no more than 700 Ω/square.

公开(公告)号：US10319580B2

公开(公告)日：2019-06-11

申请号：US15531462

申请日：2015-12-09

申请人： RFHIC Corporation

发明人： Firooz Nasser-Faili ,  Daniel Francis ,  Frank Yantis Lowe ,  Daniel James Twitchen

IPC分类号： C23C16/27 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267

摘要： A semiconductor device structure comprising: a layer of compound semiconductor material; and a layer of polycrystalline CVD diamond material, wherein the layer of polycrystalline CVD diamond material is bonded to the layer of compound semiconductor material via a layer of nano-crystalline diamond which is directly bonded to the layer of compound semiconductor material, the layer of nano-crystalline diamond having a thickness in a range 5 to 50 nm and configured such that an effective thermal boundary resistance (TBReff) as measured by transient thermoreflectance at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 m2K/GW.

公开(公告)号：US20180108739A1

公开(公告)日：2018-04-19

申请号：US15832718

申请日：2017-12-05

申请人： RFHIC Corporation

发明人： Quentin Diduck ,  Daniel Francis ,  Frank Yantis Lowe ,  Felix Ejeckam

IPC分类号： H01L29/16 ,  H01L23/373 ,  H01L23/00 ,  H01L21/02 ,  H01L29/165 ,  H01L21/683 ,  H01L21/20

CPC分类号： H01L29/1602 ,  H01L21/02002 ,  H01L21/2007 ,  H01L21/6835 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/98 ,  H01L29/165 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00011

摘要： Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

公开(公告)号：US20190252183A1

公开(公告)日：2019-08-15

申请号：US16383609

申请日：2019-04-14

申请人： RFHIC Corporation

发明人： Firooz NASSER-FAILI ,  Daniel Francis ,  Frank Yantis Lowe ,  Daniel James Twitchen

IPC分类号： H01L21/02 ,  C23C16/27 ,  H01L29/267 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L21/02115 ,  C23C16/274 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02444 ,  H01L21/02513 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/267

摘要： A method of fabricating a semiconductor device structure includes: providing a substrate comprising a layer of compound semiconductor material; forming a seed layer of nano-crystalline diamond having a layer thickness in a range 5 to 50 nm on the layer of compound semiconductor material; and growing a layer of polycrystalline CVD diamond on the seed layer using a chemical vapour deposition (CVD) technique. An effective thermal boundary resistance (TBReff) at an interface between the layer of compound semiconductor material and the layer of polycrystalline CVD diamond material is no more than 50 m2K/GW.

公开(公告)号：US09882007B2

公开(公告)日：2018-01-30

申请号：US14409867

申请日：2013-07-02

申请人： RFHIC Corporation

发明人： Quentin Diduck ,  Daniel Francis ,  Frank Yantis Lowe ,  Felix Ejeckham

IPC分类号： H01L23/00 ,  H01L29/16 ,  H01L21/683 ,  H01L29/165 ,  H01L23/373 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01L29/1602 ,  H01L21/02002 ,  H01L21/2007 ,  H01L21/6835 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/98 ,  H01L29/165 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00011

摘要： Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers (401) to a carrier (407) are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

公开(公告)号：US10586850B2

公开(公告)日：2020-03-10

申请号：US15832718

申请日：2017-12-05

申请人： RFHIC Corporation

发明人： Quentin Diduck ,  Daniel Francis ,  Frank Yantis Lowe ,  Felix Ejeckam

IPC分类号： H01L29/16 ,  H01L21/20 ,  H01L21/02 ,  H01L23/373 ,  H01L21/683 ,  H01L29/165 ,  H01L23/00

摘要： Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

公开(公告)号：US10297526B2

公开(公告)日：2019-05-21

申请号：US15531463

申请日：2015-12-09

申请人： RFHIC Corporation

发明人： Frank Yantis Lowe ,  Daniel Francis ,  Firooz Nasser-Faili ,  Daneil James Twitchen

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L23/373 ,  H01L29/778

摘要： A semiconductor device structure includes a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material. The layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm. The effective thermal boundary resistance as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m2K/GW with a variation of no more than 12 m2K/GW as measured across the semiconductor device structure. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm2V−1s−1; and a sheet resistance of no more than 700 Ω/square.