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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20140206155A1

    公开(公告)日：2014-07-24

    申请号：US14220643

    申请日：2014-03-20

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Komaki INOUE ,  Yutaka HOSHINO

    IPC: H01L29/66

    CPC classification number: H01L29/66772 ,  H01L21/743 ,  H01L21/76816 ,  H01L21/84 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The reliability of a semiconductor device including a MOSFET formed over an SOI substrate is improved. A manufacturing method of the semiconductor device is simplified. A semiconductor device with n-channel MOSFETsQn formed over an SOI substrate SB includes an n+-type semiconductor region formed as a diffusion layer over an upper surface of a support substrate under a BOX film, and a contact plug CT2 electrically coupled to the n+-type semiconductor region and penetrating an element isolation region, which can control the potential of the support substrate. At a plane of the SOI substrate SB, the n-channel MOSFETsQn each extend in a first direction, and are arranged between the contact plugs CT2 formed adjacent to each other in the first direction.

    Abstract translation: 提高了在SOI衬底上形成的MOSFET的半导体器件的可靠性。 半导体器件的制造方法简化。 在SOI衬底SB上形成的具有n沟道MOSFET Qn的半导体器件包括在BOX膜下形成为在支撑衬底的上表面上的扩散层的n +型半导体区域，以及与n + 并且穿透可以控制支撑衬底的电位的元件隔离区域。 在SOI衬底SB的平面上，n沟道MOSFETsn各自沿第一方向延伸，并且布置在沿第一方向彼此相邻形成的接触插头CT2之间。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    4.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号：US20150155300A1

    公开(公告)日：2015-06-04

    申请号：US14593070

    申请日：2015-01-09

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Yutaka HOSHINO

    IPC: H01L27/12 ,  H01L29/78

    CPC classification number: H01L27/1203 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/10894 ,  H01L29/518 ,  H01L29/78 ,  H01L29/7833

    Abstract: A semiconductor device has a first element region, a second element region, and a first isolation region in a thin film region and a third element region, a fourth element region, and a second isolation region in a thick film region. It is manufactured with step (a) of providing a substrate having a silicon layer formed via an insulating layer, step (b) of forming element isolation insulating films in the silicon layer in the first isolation region and the second isolation region of the substrate step (c) of forming a hard mask in the thin film region, step (d) of forming silicon films over the silicon layer exposed from the hard mask in the third element region and the fourth element region, and step (e) of forming element isolation insulating films between the silicon films in the third element region and the fourth element region.

    Abstract translation: 半导体器件在薄膜区域中具有第一元件区域，第二元件区域和第一隔离区域，并且在厚膜区域中具有第三元件区域，第四元件区域和第二隔离区域。 制造步骤（a），提供具有通过绝缘层形成的硅层的衬底，步骤（b）在第一隔离区域中的硅层和衬底步骤的第二隔离区域中形成元件隔离绝缘膜 （c）在所述薄膜区域中形成硬掩模，在从所述第三元件区域和所述第四元件区域中的所述硬掩模露出的所述硅层上形成硅膜的步骤（d），以及形成元件的步骤（e） 在第三元件区域中的硅膜和第四元件区域之间的隔离绝缘膜。

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