公开(公告)号：US20240313128A1

公开(公告)日：2024-09-19

申请号：US18541441

申请日：2023-12-15

Applicant: Renesas Electronics Corporation

Inventor： Zen INOUE ,  Yudai HIGA

IPC: H01L29/866 ,  H01L27/02 ,  H01L29/66

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L29/66106

Abstract: A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.

公开(公告)号：US20240055301A1

公开(公告)日：2024-02-15

申请号：US18336203

申请日：2023-06-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yudai HIGA ,  Atsushi SAKAI ,  Yotaro GOTO

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823481 ,  H01L27/088 ,  H01L21/823475

Abstract: A semiconductor device includes a cell region in which MISFETs are formed, and a peripheral region surrounding the cell region in plan view. In the cell region and the peripheral region, an n-type impurity region is formed in a semiconductor substrate. In the semiconductor substrate, an element isolation portion, a p-type impurity region, and an n-type impurity region are formed in the peripheral region so as to surround the cell region in plan view. A p-type impurity region and an n-type impurity region are formed in the semiconductor substrate in the cell region so as to contact the impurity region. The element isolation portion is located in the impurity region and is spaced apart from a junction interface between the impurity region and the impurity region.

公开(公告)号：US20250072018A1

公开(公告)日：2025-02-27

申请号：US18941036

申请日：2024-11-08

Applicant: Renesas Electronics Corporation

Inventor： Zen INOUE ,  Yudai HIGA

IPC: H01L29/866 ,  H01L27/02 ,  H01L29/66

Abstract: A semiconductor device includes a first well region, a second well region, a body region, and a cathode region. The impurity concentration of the body region is higher than the impurity concentration of the first well region, and the impurity concentration of the second well region is higher than the impurity concentration of the body region. In plan view, the body region includes the cathode region, and the cathode region includes the second well region. The cathode region configures a cathode of a Zener diode, and the first well region, the second well region, and the body region configure an anode of the Zener diode.