公开(公告)号：US20150227158A1

公开(公告)日：2015-08-13

申请号：US14693133

申请日：2015-04-22

Applicant: Renesas Electronics Corporation

Inventor： Kazutoshi SAKO ,  Tomokazu MATSUZAKI

IPC: G05F3/26

CPC classification number: G05F3/262 ,  G05F1/561 ,  G05F3/10 ,  G05F3/20 ,  G05F3/245 ,  H03K3/0231 ,  H03L1/022

Abstract: A semiconductor device includes: a voltage generation unit that generates a first voltage having a first temperature characteristic; a constant voltage generation unit that generates a constant voltage; and an adjustment unit that generates a second voltage having a second temperature characteristic and a third voltage having a third temperature characteristic using the first voltage and the constant voltage. The constant voltage generation unit generates the constant voltage independently of the adjustment unit. One of the second and third temperature characteristics is an opposite characteristic to the first temperature characteristic. The device can also include a control unit that selects one of the second and third voltages in response to a predetermined setting value.

Abstract translation: 半导体器件包括：电压产生单元，其产生具有第一温度特性的第一电压; 产生恒定电压的恒压产生单元; 以及调整单元，其使用所述第一电压和所述恒定电压生成具有第二温度特性的第二电压和具有第三温度特性的第三电压。 恒定电压产生单元独立于调节单元产生恒定电压。 第二和第三温度特性之一与第一温度特性相反。 该装置还可以包括响应于预定设定值选择第二和第三电压之一的控制单元。

公开(公告)号：US20200076409A1

公开(公告)日：2020-03-05

申请号：US16534592

申请日：2019-08-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Chiemi HASHIMOTO ,  Kosuke YAYAMA ,  Tomokazu MATSUZAKI

IPC: H03K3/011 ,  H01L49/02 ,  H01L23/522 ,  G01L1/22

Abstract: The polysilicon resistance has a large resistance variation rate after the end of the mold packaging process. In order to enable high-precision trimming, it is desired to realize a resistance which is hardly affected by stress and temperature fluctuation generated in a substrate by a mold packaging process. A resistance element is formed in a plurality of wiring layers, and has a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and a repeating pattern of an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the interlayer conductive layer is formed of a plurality of types of materials.

公开(公告)号：US20180375497A1

公开(公告)日：2018-12-27

申请号：US16004014

申请日：2018-06-08

Applicant: Renesas Electronics Corporation

Inventor： Chiemi HASHIMOTO ,  Kosuke YAYAMA ,  Katsumi TSUNENO ,  Tomokazu MATSUZAKI

IPC: H03K3/011 ,  H01L27/08 ,  H01L49/02 ,  H01L23/522 ,  H03K3/356

Abstract: A polycrystalline silicon resistor is large in coefficient of fluctuation in resistance between before and after the completion of a package molding process. To enable highly accurate trimming, it is desired to implement a resistor that is hardly subjected to stress produced in a substrate during a package molding process. A resistance element is formed of a plurality of wiring layers and has a repetitive pattern of a first conductive layer formed in a first wiring layer, a second conductive layer formed in a second wiring layer, and an interlayer conductive layer coupling the first conductive layer and the second conductive layer together.

公开(公告)号：US20180076816A1

公开(公告)日：2018-03-15

申请号：US15652843

申请日：2017-07-18

Applicant: Renesas Electronics Corporation

Inventor： Tomokazu MATSUZAKI

IPC: H03L1/02 ,  H03B5/32 ,  G01K7/32

CPC classification number: H03L1/026 ,  G01K7/32 ,  H03B5/32

Abstract: It is possible to flexibly respond to accuracy required for a temperature sensor. An oscillator 11 generates a clock signal. The oscillator 11 is configured to be capable of changing a relationship between a frequency of the clock signal and a temperature. A counter 13 is configured to count the clock signal generated by the oscillator 11 by using a reference signal having a frequency not changing depending on a temperature. A CPU 16 generates temperature information based on the relationship between the frequency of the clock signal and the temperature in the oscillator 11 and a count value of the counter 13. The control circuit 14 changes the relationship between the frequency of the clock signal and the temperature in the oscillator 11 when the counter 13 overflows.

公开(公告)号：US20130214869A1

公开(公告)日：2013-08-22

申请号：US13770668

申请日：2013-02-19

Applicant: Renesas Electronics Corporation

Inventor： Tomokazu MATSUZAKI ,  Kazutoshi SAKO

IPC: G05F1/567 ,  H02M3/156 ,  H03L1/04

CPC classification number: G05F1/567 ,  H02M3/156 ,  H03K3/011 ,  H03K3/02315 ,  H03L1/022 ,  H03L1/04

Abstract: A semiconductor device includes: a resistance R whose resistance value varies in response to a substrate temperature variation; a resistance corrector that is coupled in series with the resistance R and switches its resistance value by a preset resistance step width to suppress a resistance value variation of the resistance R; a first voltage generator for generating a first voltage that varies in response to the substrate temperature; a second voltage generator for generating second voltages Vf1 to Vfn−1 for specifying the first voltage at a point when a switching operation of the resistance value of the resistance corrector is performed; and a resistance switch unit for switching the resistance value of the resistance corrector by comparing the first voltage and the second voltages Vf1 to Vfn−1.

Abstract translation: 半导体器件包括：电阻R，其电阻值响应于衬底温度变化而变化; 电阻校正器，其与电阻R串联耦合，并将其电阻值切换预设电阻步长以抑制电阻R的电阻值变化; 用于产生响应于衬底温度变化的第一电压的第一电压发生器; 第二电压发生器，用于产生第二电压Vf1至Vfn-1，用于在执行电阻校正器的电阻值的开关操作时指定第一电压; 以及电阻开关单元，用于通过比较第一电压和第二电压Vf1至Vfn-1来切换电阻校正器的电阻值。