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公开(公告)号：US20150085888A1
公开(公告)日：2015-03-26
申请号：US14491798
申请日：2014-09-19
发明人： Satoshi AE , Shoutarou KITAMURA , Tetsuro OKUDA , Suguru KATO , Isao WATANABE
CPC分类号： H01S5/3202 , H01S5/2201 , H01S5/2224 , H01S5/2272 , H01S5/34313 , H01S2304/04
摘要： To improve characteristics of a semiconductor device (semiconductor laser), an active layer waveguide (AWG) comprised of InP is formed over an exposed part of a surface of a substrate having an off angle ranging from 0.5° to 1.0° in a [1-1-1] direction from a (100) plane to extend in the [0-1-1] direction. A cover layer comprised of p-type InP is formed over the AWG with a V/III ratio of 2000 or more. Thereby, it is possible to obtain excellent multiple quantum wells (MQWs) by reducing a film thickness variation of the AWG. Moreover, the cover layer having side faces where a (0-11) plane almost perpendicular to a substrate surface mainly appears can be formed. A sectional shape of a lamination part of the cover layer and the AWG becomes an approximately rectangular shape. Therefore, an electrification region can be enlarged and it is possible to reduce a resistance of the semiconductor device.
摘要翻译： 为了改善半导体器件（半导体激光器）的特性，在In-P形成的偏离角范围为0.5°至1.0°的衬底的表面的暴露部分上形成由InP组成的有源层波导（AWG） 1-1]方向从（100）平面延伸到[0-1-1]方向。 在AWG上形成由p型InP构成的覆盖层，V / III比为2000以上。 因此，通过减小AWG的膜厚度变化，可以获得优异的多量子阱（MQW）。 此外，可以形成具有主要出现与基板表面几乎垂直的（0-11）面的侧面的覆盖层。 覆盖层和AWG的层叠部分的截面形状变为近似矩形。 因此，可以扩大带电区域，并且可以降低半导体器件的电阻。
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公开(公告)号：US20170271848A1
公开(公告)日：2017-09-21
申请号：US15611268
申请日：2017-06-01
发明人： Satoshi AE , Shoutarou KITAMURA , Tetsuro OKUDA , Suguru KATO , Isao WATANABE
CPC分类号： H01S5/3202 , H01S5/2201 , H01S5/2224 , H01S5/2272 , H01S5/34313 , H01S2304/04
摘要： To improve characteristics of a semiconductor device (semiconductor laser), an active layer waveguide (AWG) comprised of InP is formed over an exposed part of a surface of a substrate having an off angle ranging from 0.5° to 1.0° in a [1-1-1] direction from a (100) plane to extend in the [0-1-1] direction. A cover layer comprised of p-type InP is formed over the AWG with a V/III ratio of 2000 or more. Thereby, it is possible to obtain excellent multiple quantum wells (MQWs) by reducing a film thickness variation of the AWG. Moreover, the cover layer having side faces where a (0-11) plane almost perpendicular to a substrate surface mainly appears can be formed. A sectional shape of a lamination part of the cover layer and the AWG becomes an approximately rectangular shape. Therefore, an electrification region can be enlarged and it is possible to reduce a resistance of the semiconductor device.
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