公开(公告)号：US11317505B2

公开(公告)日：2022-04-26

申请号：US17178945

申请日：2021-02-18

Applicant: RAYTHEON COMPANY

Inventor： Brian K. Atwood ,  Thang D. Nguyen ,  Sankerlingam Rajendran ,  Douglas R. Gentry ,  Walter B. Aschenbeck, Jr.

IPC: H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K3/00 ,  H05K3/40 ,  H05K3/46

Abstract: A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.

公开(公告)号：US11096271B1

公开(公告)日：2021-08-17

申请号：US16844586

申请日：2020-04-09

Applicant: RAYTHEON COMPANY

Inventor： Brian K. Atwood ,  Thang D. Nguyen ,  Sankerlingam Rajendran ,  Douglas R. Gentry ,  Walter B. Aschenbeck, Jr.

IPC: H05K1/02 ,  H05K1/11 ,  H05K1/03 ,  H05K3/40 ,  H05K3/00 ,  H05K3/46

Abstract: A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.

公开(公告)号：US20210321511A1

公开(公告)日：2021-10-14

申请号：US17178945

申请日：2021-02-18

Applicant: RAYTHEON COMPANY

Inventor： Brian K. Atwood ,  Thang D. Nguyen ,  Sankerlingam Rajendran ,  Douglas R. Gentry ,  Walter B. Aschenbeck, JR.

IPC: H05K1/02 ,  H05K1/03 ,  H05K3/46 ,  H05K3/00 ,  H05K3/40 ,  H05K1/11

Abstract: A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.