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    BIPOLAR TRANSISTOR
    1.
    发明申请
    BIPOLAR TRANSISTOR 有权

    公开(公告)号：US20210175328A1

    公开(公告)日：2021-06-10

    申请号：US16706931

    申请日：2019-12-09

    申请人： Qorvo US, Inc.

    发明人： Peter J. Zampardi ,  Timothy S. Henderson ,  Leonard Hayden ,  Adrian Hutchinson

    IPC分类号： H01L29/08 ,  H01L29/10

    摘要： Disclosed is a transistor having a base, a substrate, and a collector between the substrate and the base. The collector has a first region of a first thickness under the base and is made up of a first dopant type having a substantially constant doping concentration across the first thickness. A second region with a second thickness under the first region is made up of a second dopant type that is different from the first dopant type and has a substantially constant doping concentration across the second thickness. A third region with a third thickness under the second region is made up of the second dopant type with a graded doping concentration that is a function of increasing distance from the second region through the third thickness. An emitter is located over the base opposite the collector.

    Bipolar transistor
    3.
    发明授权
    Bipolar transistor 有权

    公开(公告)号：US11282923B2

    公开(公告)日：2022-03-22

    申请号：US16706931

    申请日：2019-12-09

    申请人： Qorvo US, Inc.

    发明人： Peter J. Zampardi ,  Timothy S. Henderson ,  Leonard Hayden ,  Adrian Hutchinson

    IPC分类号： H01L29/08 ,  H01L29/10

    摘要： Disclosed is a transistor having a base, a substrate, and a collector between the substrate and the base. The collector has a first region of a first thickness under the base and is made up of a first dopant type having a substantially constant doping concentration across the first thickness. A second region with a second thickness under the first region is made up of a second dopant type that is different from the first dopant type and has a substantially constant doping concentration across the second thickness. A third region with a third thickness under the second region is made up of the second dopant type with a graded doping concentration that is a function of increasing distance from the second region through the third thickness. An emitter is located over the base opposite the collector.

    Dual stack varactor
    4.
    发明授权
    Dual stack varactor 有权

    公开(公告)号：US10535784B2

    公开(公告)日：2020-01-14

    申请号：US15901061

    申请日：2018-02-21

    申请人： Qorvo US, Inc.

    发明人： Peter V. Wright ,  Timothy S. Henderson

    IPC分类号： H01L29/93 ,  H01L29/66 ,  H01L25/07 ,  H01L27/08 ,  H01L29/20 ,  H01L29/737

    摘要： Embodiments include apparatuses and methods related to vertically stacked varactors. Specifically two varactors may be constructed of vertically stacked layers including an anode layer, a contact layer, and a varactor layer. The two varactors may share one or more layers in common. In some embodiments the two varactors may share the anode layer in common, while in other embodiments the two varactors may share the contact layer in common.

    Dual-series varactor EPI
    5.
    发明授权
    Dual-series varactor EPI 有权

    公开(公告)号：US10833071B2

    公开(公告)日：2020-11-10

    申请号：US16053211

    申请日：2018-08-02

    申请人： Qorvo US, Inc.

    发明人： Peter V. Wright ,  Timothy S. Henderson

    IPC分类号： H01L27/08 ,  H01L29/66 ,  H01L29/93 ,  H01L25/07 ,  H01L29/20

    摘要： A semiconductor device includes a first varactor diode and a second varactor diode. The second varactor diode is coupled in series with the first varactor diode and vertically disposed over the first varactor diode. By vertically disposing the second varactor diode over the first varactor diode, the space occupied by the pair of varactor diodes can be significantly reduced.