公开(公告)号：US20230345692A1

公开(公告)日：2023-10-26

申请号：US17660758

申请日：2022-04-26

Applicant: QUALCOMM Incorporated

Inventor： Fadoua CHAFIK ,  Xiaochen ZHANG

IPC: H01L27/11 ,  H01L29/66

CPC classification number: H01L27/1108 ,  H01L29/6653

Abstract: Disclosed are apparatuses and techniques for fabricating an apparatus including a semiconductor device. The semiconductor device may include one or more static random-access memory (SRAM) transistors, each including a first gate spacer structure; one or more logic nominal transistors, each including a second gate spacer structure; and one or more logic gate-biased transistors, each including a third gate spacer structure, where the third gate spacer structure is thinner than the first gate spacer structure and where the one or more SRAM transistors, the one or more logic nominal transistors, and the one or more logic gate-biased transistors each have a same contacted poly pitch (CPP).