VOLTAGE LEVEL SHIFTING WITH REDUCED TIMING DEGRADATION

    公开(公告)号:US20230145180A1

    公开(公告)日:2023-05-11

    申请号:US17521651

    申请日:2021-11-08

    CPC classification number: H03K3/0375

    Abstract: An aspect of the disclosure relates to an apparatus including a first field effect transistor (FET) including a first gate configured to receive a first input signal that varies in accordance with a first voltage domain; and a first inverter including a first input configured to receive a second input signal that varies in accordance with a second voltage domain, and a first output configured to generate a first output signal that varies in accordance with the second voltage domain, wherein the first output signal is based on the first and second input signals, and wherein the first FET and the first inverter are coupled in series between first and second voltage rails. Per another aspect, the apparatus includes additional circuitry to allow the apparatus to process signals in accordance with a third voltage domain.

    DYNAMIC TRANSISTOR GATE OVERDRIVE FOR INPUT/OUTPUT (I/O) DRIVERS AND LEVEL SHIFTERS

    公开(公告)号:US20210111720A1

    公开(公告)日:2021-04-15

    申请号:US17008068

    申请日:2020-08-31

    Abstract: An apparatus for generating an output voltage signal based on an input voltage signal. The apparatus includes a first field effect transistor (FET) including a first gate configured to receive a first gate voltage based on the input voltage signal; a second (FET) including a second gate configured to receive a second gate voltage based on the input voltage signal, wherein the first and second FETs are coupled in series between a first voltage rail and a second voltage rail, and wherein the output voltage signal is produced at an output node between the first and second FETs; and a gate overdrive circuit configured to temporarily reduce the first gate voltage during a portion of a transition of the output voltage signal from a logic low level to a logic high level.

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