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公开(公告)号:US12100474B2
公开(公告)日:2024-09-24
申请号:US17954852
申请日:2022-09-28
Applicant: QUALCOMM Incorporated
Inventor: Yong Xu , Satish Krishnamoorthy , Boris Dimitrov Andreev , Patrick Isakanian , Farrukh Aquil , Vikas Mahendiyan , Ravindra Arvind Khedkar
CPC classification number: G11C7/222 , G11C7/1066 , G11C7/14
Abstract: A memory interface circuit has a first differential receiver having a first input coupled to a first reference voltage source, a second differential receiver configured to receive a differential data strobe signal in a pair of complementary signals, a third differential receiver having a first input coupled to a second reference voltage source and a second input configured to receive one of the pair of complementary signals, a clock generation circuit configured to generate a read clock signal based on an output of the second differential receiver and using a qualifying signal output by the third differential receiver to qualify one or more edges in the read clock signal and a data capture circuit clocked by the read clock signal and configured to capture data from the output of the first differential receiver using the one or more edges in the read clock signal.