公开(公告)号：US20220320021A1

公开(公告)日：2022-10-06

申请号：US17843986

申请日：2022-06-18

Applicant: QUALCOMM Incorporated

Inventor： Ibrahim Ramez CHAMAS ,  Mohamed ABOUZIED ,  Bhushan Shanti ASURI

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/58 ,  H03H7/42

Abstract: An RF flip chip is provided in which a local bump region adjacent a die corner includes a balun having a centrally-located bump.

公开(公告)号：US20230073019A1

公开(公告)日：2023-03-09

申请号：US17470191

申请日：2021-09-09

Applicant: QUALCOMM Incorporated

Inventor： Mohamed ABOUZIED ,  Vinod PANIKKATH ,  Li LIU ,  Chuan WANG

IPC: H03F3/45 ,  H04B1/40

Abstract: An aspect relates to an apparatus including a radio frequency (RF) signal power detector. The RF signal power detector includes a first current source configured to generate a first current based on a power level of a first RF signal; a transimpedance amplifier (TIA) configured to generate a first voltage based on the first current, wherein the TIA is coupled between a first upper voltage rail and a lower voltage rail; and a second current source configured to generate a second current related to the first current, wherein the first and second current sources are coupled in series between a second upper voltage rail and the lower voltage rail.

公开(公告)号：US20230208370A1

公开(公告)日：2023-06-29

申请号：US18171270

申请日：2023-02-17

Applicant: QUALCOMM Incorporated

Inventor： Mohamed ABOUZIED ,  Vinod PANIKKATH ,  Li LIU ,  Chuan WANG

IPC: H03F3/45 ,  H04B1/40

CPC classification number: H03F3/45475 ,  H04B1/40 ,  H03F2200/451 ,  H03F2200/294

Abstract: An aspect relates to an apparatus including a radio frequency (RF) signal power detector. The RF signal power detector includes a first current source configured to generate a first current based on a power level of a first RF signal; a transimpedance amplifier (TIA) configured to generate a first voltage based on the first current, wherein the TIA is coupled between a first upper voltage rail and a lower voltage rail; and a second current source configured to generate a second current related to the first current, wherein the first and second current sources are coupled in series between a second upper voltage rail and the lower voltage rail.

公开(公告)号：US20210358871A1

公开(公告)日：2021-11-18

申请号：US16875972

申请日：2020-05-15

Applicant: QUALCOMM Incorporated

Inventor： Ibrahim Ramez CHAMAS ,  Mohamed ABOUZIED ,  Bhushan Shanti ASURI

IPC: H01L23/66 ,  H03H7/42 ,  H01L23/00 ,  H01L23/58

Abstract: An RF flip chip is provided in which a local bump region adjacent a die corner includes a balun having a centrally-located bump.