公开(公告)号：US08897727B2

公开(公告)日：2014-11-25

申请号：US13828714

申请日：2013-03-14

Applicant: QUALCOMM Incorporated

Inventor： Xinwei Wang ,  Yongrong Zuo ,  Xiangdong Zhang ,  Marc Gerald DiCicco

IPC: H04B17/00 ,  H03F3/45 ,  G01R21/14 ,  H03F3/24 ,  H03G1/04 ,  H03G3/30

CPC classification number: H04B17/0062 ,  G01R21/10 ,  G01R21/14 ,  G01R29/0871 ,  H03F3/245 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2200/447 ,  H03F2200/453 ,  H03F2200/456 ,  H03F2200/465 ,  H03F2203/45112 ,  H03F2203/45156 ,  H03F2203/45292 ,  H03F2203/45302 ,  H03F2203/45481 ,  H03G1/04 ,  H03G3/3036 ,  H04B17/21

Abstract: Power detectors with temperature compensation and having improved accuracy over temperature are disclosed. In an aspect of the disclosure, variations of a power detector gain over temperature is reduced by varying both the gate and drain voltages of MOS transistors within a power detector. In an exemplary design, an apparatus includes at least one MOS transistor, which receives an input signal, detects the power of the input signal based on a power detection gain, and provides an output signal indicative of the power of the input signal. The at least one MOS transistor is applied a variable gate bias voltage and a variable drain bias voltage in order to reduce variations of the power detection gain over temperature. At least one additional MOS transistor may receive a second variable gate bias voltage and provide the variable drain bias voltage for the at least one MOS transistor.

Abstract translation: 公开了具有温度补偿并且具有提高的温度精度的功率检测器。 在本公开的一个方面，通过改变功率检测器内的MOS晶体管的栅极和漏极电压来降低功率检测器的增益随温度的变化。 在示例性设计中，一种装置包括至少一个MOS晶体管，其接收输入信号，基于功率检测增益来检测输入信号的功率，并提供表示输入信号功率的输出信号。 至少一个MOS晶体管被施加可变栅极偏置电压和可变漏极偏置电压，以便减小功率检测增益随温度的变化。 至少一个附加MOS晶体管可以接收第二可变栅极偏置电压，并为至少一个MOS晶体管提供可变漏极偏置电压。

公开(公告)号：US20130324062A1

公开(公告)日：2013-12-05

申请号：US13828714

申请日：2013-03-14

Applicant: QUALCOMM INCORPORATED

Inventor： Xinwei Wang ,  Yongrong Zuo ,  Xiangdong Zhang ,  Marc Gerald DiCicco

IPC: H04B17/00

CPC classification number: H04B17/0062 ,  G01R21/10 ,  G01R21/14 ,  G01R29/0871 ,  H03F3/245 ,  H03F3/45183 ,  H03F3/45188 ,  H03F2200/447 ,  H03F2200/453 ,  H03F2200/456 ,  H03F2200/465 ,  H03F2203/45112 ,  H03F2203/45156 ,  H03F2203/45292 ,  H03F2203/45302 ,  H03F2203/45481 ,  H03G1/04 ,  H03G3/3036 ,  H04B17/21

Abstract: Power detectors with temperature compensation and having improved accuracy over temperature are disclosed. In an aspect of the disclosure, variations of a power detector gain over temperature is reduced by varying both the gate and drain voltages of MOS transistors within a power detector. In an exemplary design, an apparatus includes at least one MOS transistor, which receives an input signal, detects the power of the input signal based on a power detection gain, and provides an output signal indicative of the power of the input signal. The at least one MOS transistor is applied a variable gate bias voltage and a variable drain bias voltage in order to reduce variations of the power detection gain over temperature. At least one additional MOS transistor may receive a second variable gate bias voltage and provide the variable drain bias voltage for the at least one MOS transistor.

Abstract translation: 公开了具有温度补偿并且具有提高的温度精度的功率检测器。 在本公开的一个方面，通过改变功率检测器内的MOS晶体管的栅极和漏极电压来降低功率检测器的增益随温度的变化。 在示例性设计中，一种装置包括至少一个MOS晶体管，其接收输入信号，基于功率检测增益来检测输入信号的功率，并提供表示输入信号功率的输出信号。 至少一个MOS晶体管被施加可变栅极偏置电压和可变漏极偏置电压，以便减小功率检测增益随温度的变化。 至少一个附加MOS晶体管可以接收第二可变栅极偏置电压，并为至少一个MOS晶体管提供可变漏极偏置电压。