公开(公告)号：US20200020686A1

公开(公告)日：2020-01-16

申请号：US16035387

申请日：2018-07-13

Applicant: QUALCOMM Incorporated

Inventor： Junjing BAO ,  Yan WANG ,  Jie DENG ,  Giridhar NALLAPATI

IPC: H01L27/08 ,  H01L29/94 ,  H01L29/66 ,  H01L49/02 ,  H01L23/522

Abstract: An integrated circuit (e.g., a stacked capacitor) achieves higher capacitor density without additional area consumption. The integrated circuit includes a metal-oxide-semiconductor capacitor (MOSCAP), a metal-oxide-metal capacitor (MOMCAP) and a metal-insulator-metal capacitor (MIMCAP) stacked together. The MOSCAP includes a gate and source/drain (S/D) regions. The MOMCAP is included in back-end-of-line (BEOL) layers over the MOSCAP or supported by the MOSCAP.