公开(公告)号：US20220181325A1

公开(公告)日：2022-06-09

申请号：US17110802

申请日：2020-12-03

Applicant: QUALCOMM Incorporated

Inventor： Harikrishna CHINTARLAPALLI REDDY ,  Pradeep Kumar SANA ,  Chulkyu LEE ,  Jeffrey Charles LEE ,  Sajin MOHAMAD

IPC: H01L27/092 ,  H01L27/02

Abstract: A MOS device includes a set of pMOS transistors on a first side of an IC. The set of pMOS transistors is adjacent to each other in a second direction. The MOS device further includes a set of nMOS transistors on a second side of the IC. The set of nMOS transistors is adjacent to each other in the second direction. The second side is opposite the first side in a first direction orthogonal to the second direction. The MOS device further includes an OD region between the set of pMOS transistors and the set of nMOS transistors. A first set of gate interconnects may extend in the first direction over the OD region. A set of contacts may contact the OD region. The OD region, the first set of gate interconnects, and the set of contacts may form a set of transistors configured as dummy transistors or decoupling capacitors.