公开(公告)号：US09269492B2

公开(公告)日：2016-02-23

申请号：US13799079

申请日：2013-03-13

Applicant: QUALCOMM Incorporated

Inventor： John J. Zhu ,  Pr Chidambaram ,  Lixin Ge ,  Bin Yang ,  Jihong Choi

IPC: H01G4/012 ,  H01G4/38 ,  H01G4/005 ,  H01L49/02 ,  H01G4/33 ,  H01G4/10

CPC classification number: H01G4/012 ,  H01G4/005 ,  H01G4/10 ,  H01G4/33 ,  H01G4/38 ,  H01L28/86

Abstract: An orthogonal finger capacitor includes a layer having an anode bone frame adjacent a cathode bone frame, the anode bone frame having a first portion extending along an axis and a second portion extending perpendicular to the axis. A set of anode fingers extends from the first portion. A set of cathode fingers extends from the cathode bone frame, interdigitated with the set of anode fingers. An overlaying layer has another anode bone frame having a first portion parallel to the axis and a perpendicular second portion. A via couples the overlaying anode bone frame to the underlying anode bone frame. The via is located where the first portion of the overlaying anode bone frame overlaps the second portion of the underlying anode bone frame or, optionally, where the second portion of the overlying anode bone frame overlaps the first portion of the underlying anode bone frame.

Abstract translation: 正交手指电容器包括具有邻近阴极骨架的阳极骨架的层，阳极骨架具有沿轴线延伸的第一部分和垂直于轴线延伸的第二部分。 一组阳极指从第一部分延伸。 一组阴极指状物从阴极骨框架延伸，与一组阳极指状物交叉。 覆盖层具有另一阳极骨架，其具有平行于轴线的第一部分和垂直的第二部分。 A通孔将覆盖的阳极骨框架耦合到下面的阳极骨框架。 通孔位于覆盖阳极骨框架的第一部分与下面的阳极骨框架的第二部分重叠的位置，或者可选地，其中上覆的阳极骨架的第二部分与下面的阳极骨架的第一部分重叠。

公开(公告)号：US09252104B2

公开(公告)日：2016-02-02

申请号：US14512191

申请日：2014-10-10

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  Bin Yang ,  Pr Chidambaram ,  Lixin Ge ,  Jihong Choi

IPC: H01L29/00 ,  H01L23/538 ,  H01L27/08 ,  H01L49/02 ,  H01L23/522

CPC classification number: H01L23/538 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of the interconnect stack. The CBC structure also includes a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes a metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure also includes a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having a portion of the first upper interconnect layer, and a second capacitor plate having a portion of the MIM capacitor layer(s).

Abstract translation: 互补的后端（BEOL）电容器（CBC）结构包括金属氧化物金属（MOM）电容器结构。 MOM电容器结构耦合到集成电路（IC）器件的互连堆叠的第一上互连层。 MOM电容器结构包括互连叠层的下互连层。 CBC结构还包括耦合到MOM电容器结构的互连叠层的第二上互连层。 CBC结构还包括在第一上部互连层和第二上部互连层之间的金属绝缘体金属（MIM）电容器层。 此外，CBC结构还包括耦合到MOM电容器结构的MIM电容器结构。 MIM电容器结构包括具有第一上部互连层的一部分的第一电容器板和具有MIM电容器层的一部分的第二电容器板。

公开(公告)号：US09236483B2

公开(公告)日：2016-01-12

申请号：US14179311

申请日：2014-02-12

Applicant: QUALCOMM Incorporated

Inventor： Bin Yang ,  Xia Li ,  Pr Chidambaram ,  Choh Fei Yeap

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/78 ,  H01L29/267 ,  H01L29/06 ,  H01L29/66 ,  H03K17/687

CPC classification number: H01L29/7855 ,  H01L29/0607 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/7851 ,  H03K17/687 ,  H03K2017/6878 ,  H03K2217/0018 ,  H03K2217/0054

Abstract: A FinFET having a backgate and a barrier layer beneath the fin channel of the FinFET, where the barrier layer has a bandgap greater than that of the backgate. The barrier layer serves as an etch stop layer under the fin channel, resulting in reduced fin channel height variation. The backgate provides improved current control. There is less punchthrough due to the higher bandgap barrier layer. The FinFET may also include deeply embedded stressors adjacent to the source/drain diffusions through the high bandgap barrier layer.

Abstract translation: 在FinFET的鳍通道下方具有背栅和阻挡层的FinFET，其中阻挡层的带隙大于背栅的带隙。 阻挡层在翅片通道下面用作蚀刻停止层，从而减少了翅片通道高度变化。 后门提供改进的电流控制。 由于较高的带隙阻挡层，穿孔较少。 FinFET还可以包括通过高带隙势垒层与源极/漏极扩散相邻的深埋入的应力源。