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1.发明申请Semiconductor device with SI-GE layer-containing low resistance, tunable contact 有权具有SI-GE层的低电阻半导体器件，可调触点公开(公告)号：US20030127738A1
公开(公告)日：2003-07-10
申请号：US10305147
申请日：2002-11-27
Applicant: ProMOS Technologies Inc.
Inventor： Brian S. Lee , John Walsh
IPC: H01L023/52 , H01L027/01 , H01L021/4763
CPC classification number: H01L21/28518 , H01L21/28525 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76859 , H01L21/823871
Abstract: The present invention provides a semiconductor device in which a low resistance, tunable contact is formed by means of using a SixGe1nullx (0
Abstract translation: 本发明提供一种半导体器件，其中通过使用SixGe1-x（0
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